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# Non-magnetic semiconductor spin transistor

## Abstract

We propose a spin transistor using only non-magnetic materials that exploits the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum wells. We show that extremely large spin splittings due to BIA are possible in (110) InAs/GaSb/AlSb heterostructures, which together with the enhanced spin decay times in (110) quantum wells demonstrates the potential for exploitation of BIA effects in semiconductor spintronics devices. Spin injection and detection is achieved using spin-dependent resonant interband tunneling and spin transistor action is realized through control of the electron spin lifetime in an InAs lateral transport channel using an applied electric field (Rashba effect). This device may also be used as a spin valve, or a magnetic field sensor. The electronic structure and spin relaxation times for the spin transistor proposed here are calculated using a nonperturbative 14-band $`𝐤𝐩`$ nanostructure model.

A number of semiconductor spintronic devices have been proposed in recent years that rely on the energy splitting between electron spin states arising from structural inversion asymmetry,Datta:1990 ; Voskoboynikov:2000 ; deAndradaeSilva:1999 ; Koga:PRL2002 ; Ting:2002  also known as the Rashba effect.Rashba:1984  Among these device concepts, those involving only *non-magnetic* materials are especially attractive for application to high-speed, spin-sensitive electronics, since they avoid the complex materials issues and unwanted stray magnetic fields associated with the incorporation of magnetic contacts, and because their operation relies on applied electric fields only, which may be modulated at considerably higher rates than magnetic fields. The 6.1-Å lattice constant family of heterostructures (AlSb/GaSb/InAs) offers substantial advantages for such applications because of the high electron mobility of InAs and the extremely large spin splittings characteristic of these heterostructures.Ting:2002 ; Cartoixa:2001 ; Grundler:2000  However, in devices relying entirely on the Rashba effect, a tradeoff exists between the spin splitting and the spin relaxation time ($`T_1`$) due to the characteristics of the associated crystal magnetic field. In a III-V semiconductor heterostructure, the magnitude and direction of the wavevector-dependent crystal magnetic field determines the size of the spin splitting and the rate of spin relaxation through precessional decay.Lau:2001 ; ALS:book ; DP:1972  The Rashba effective magnetic field lies in the plane of the heterostructure and perpendicular to the electron wavevector.Ting:2002 ; Cartoixa:2001 ; Rashba:1984  In this case, regardless of the choice of the non-equilibrium spin orientation to be used within a specific spintronics device, promising designs incorporating a large Rashba spin splitting will suffer from rapid precessional spin relaxation,noteDTingsFilterT1  placing serious limitations on feasible device architectures.

Here we propose a spin transistor using non-magnetic materials that exploits the unique characteristics of bulk inversion asymmetry (BIA) in (110)-oriented semiconductor heterostructures. Since the BIA crystal magnetic field in (110) symmetric quantum wells is oriented approximately in the growth direction for all electron wavevectors (k),DK:1986  in devices based on such structures there is a natural choice of quantization axis for spin along which precessional spin relaxation is suppressed.DK:1986 ; Ohno:1999 ; OurCondmat  In the present work, we demonstrate that large BIA spin splittings are possible in (110) InAs/GaSb/AlSb heterostructures, exceeding reported Rasbha spin splittings in this systemCartoixa:2001 ; Heida:1998 ; Matsuyama:2000  and in InGaAs/InAlAs heterostructures.Grundler:2000 ; Sato:2001 ; Nitta:1997 ; Gui:2000

The device, which is depicted schematically in Fig. 1(a), utilizes spin-dependent resonant interband tunneling (RIT)Ting:2002 ; Soderstrom:1989  in a (110) InAs/AlSb/GaSb/AlSb/InAs heterostructure for both the generation and detection of spin-polarized electrons. Spin transistor action is realized through the application of an external electric field to a lateral transport channel formed by a high mobility, symmetric InAs two-dimensional electron gas (2DEG). The applied field reduces the spin relaxation time in the InAs quantum well through the electric field-induced Rashba effectRashba:1984 ; Grundler:2000 ; Sato:2001 ; Nitta:1997 ; Heida:1998 ; Matsuyama:2000 ; Lau:JAP2002  yielding unpolarized carriers following lateral transport. The electronic structure and spin relaxation times for the spin transistor proposed here are calculated using a nonperturbative 14-band $`𝐤𝐩`$ nanostructure model,Lau:2001  in which BIA is included naturally to all orders of the electron wavevector.

The central feature exploited in the device proposed here is the structure of the BIA crystal magnetic field in (110) symmetric quantum wells. As shown in Fig. 1(b)-(c), the salient features of this field are: (i) it is oriented primarily in the growth direction; and (ii) for each spin subband, the carrier spin points in the opposite direction on either side of k-space (about the \[001̄\] axis). The calculated field in Fig. 1(b) corresponds to the first heavy hole subband (HH1) in the GaSb/AlSb quantum well within the proposed spin injector/detector, but these primary characteristics are reproduced by both valence and conduction states for any (110) III-V semiconductor quantum well.notefield  The crystal magnetic field in Fig. 1(b)-(c) differs fundamentally from the clockwise and counter-clockwise pinwheel structure associated with the Rashba effectTing:2002 ; Cartoixa:2001 ; Rashba:1984 ; in contrast, for (110) symmetric heterostructures there is a natural choice of quantization axis for spin in the growth direction. In this case, the BIA crystal magnetic field lifts the degeneracy of the electron spin states but induces only very small precessional relaxation, resulting in long spin lifetimes. The strong enhancement of $`T_1`$ due to the near growth direction orientation of the BIA crystal magnetic field in (110)-oriented heterostructures was recently observed in GaAs/AlGaAs quantum wellsOhno:1999  and InAs/GaSb superlattices.OurCondmat

Electron spin injection in the proposed device is achieved through spin-dependent RITTing:2002 ; Soderstrom:1989 . Resonant tunneling has been utilized in both magneticPetukhov:2002 ; Hanbicki:2001  and nonmagneticVoskoboynikov:2000 ; deAndradaeSilva:1999 ; Koga:PRL2002 ; Ting:2002  spintronics device proposals in recent years. As shown in the inset of Fig. 2(a), electrons in the conduction band of the InAs emitter tunnel through the two HH1 spin states of the GaSb quantum well, whose degeneracy is lifted by BIA, to the InAs 2DEG lateral transport channel. Spin independent transport in similar RIT structures has been under investigation for more than a decade because of the advantages of the broken gap band alignment of the InAs/GaSb heterojunction for high speed electronic applications.Soderstrom:1989 ; Fay:2002  The calculated HH1 spin splitting in the GaSb quantum well is shown in Fig. 2(a) for a range of well thicknesses. For thin GaSb layers, the BIA-induced spin splitting exceeds 30 meV, and is larger than that utilized in similar spin filter devices based on the Rashba effect.Voskoboynikov:2000 ; deAndradaeSilva:1999 ; Koga:PRL2002 ; Ting:2002  The spin splitting for the first conduction subband of the GaSb quantum well, which is not used in the present device, is $`20\%`$ smaller for the range of in-plane wavevectors shown and is considerably larger than the conduction band Rashba spin splitting in InGaAs/InAlAs heterostructures.Grundler:2000 ; Sato:2001 ; Nitta:1997 ; Gui:2000  These large spin splittings, which reflect the strong spin-orbit interaction in GaSb, would permit filtering of electron spins at room temperature with suitably designed emitter and collector regions.

Since the crystal magnetic field for each of the HH1 spin subbands reverses sign on either side of the \[001̄\] axis, net spin injection is achieved by applying a lateral bias along \[1̄10\] using side gates across the InAs emitter, as depicted schematically in Fig. 1(a). The use of a lateral bias to generate spin-polarized current was described previously in analogous resonant tunnel spin filter devices employing the Rashba effect.Voskoboynikov:2000 ; Ting:2002  Fig. 2(b)-(d) shows the calculated valence subband structure of the GaSb quantum well, together with the conduction band states of the bulk InAs emitter and the InAs 2DEG lateral transport channel, which is lightly doped (Nd = 1 $`\times `$ 1017 cm-3, fermi energy 30 meV). In Fig. 2(c)-(d), +z (-z) polarized electrons (+z = ) are indicated by the shaded (diagonal striped) regions. Electrons that resonantly tunnel through the structure will emerge in the InAs 2DEG with their spins aligned with the resonant levels in the quantum well,Voskoboynikov:2000 ; deAndradaeSilva:1999 ; Ting:2002  i.e., in the $`\pm `$z direction. As shown in Fig. 2(c), under the application of a lateral bias to the bulk InAs emitter, the requirements of conservation of energy and in-plane momentum for the tunneling electrons lead to the dominance of tunnel current involving electrons of one spin (+z is shown: the direction of spin polarization is determined by the polarity of the lateral bias). The situation of Fig. 2(c) in principle leads to 100 % spin-polarized injection, leading to a partially spin-polarized distribution in the lightly doped InAs 2DEG channel. For the inter-band spin filter design proposed here, only a single hole subband is involved in the tunneling process, avoiding the need to use pauli blocking of collector states to achieve high spin filtering efficiency.Ting:2002  The heavy-hole (HH) light-hole (LH) splitting in the GaSb quantum well is very large (280 meV), resulting in strongly reduced HH-LH band mixing and the corresponding suppression of Elliott-Yafet spin relaxation processesElliott:1954 ; Yafet:1963  for electrons as they traverse the confined hole states in the GaSb quantum well. Additionally, a very small bias is required between the emitter and collector regions, generating negligible associated Rashba effects.

Spin-dependent resonant tunneling in a second GaSb quantum well (see Fig. 1(a)) is used for detection of spin-polarized electrons following lateral transport in the InAs 2DEG channel. As shown in Fig. 2(d), as long as a net spin polarization persists in the 2DEG at the second RIT structure, and the range of energies between the fermi levels of the minority and majority spin electrons is in resonance with the BIA-split spin levels of the GaSb quantum well (a condition which may be controlled through appropriate choice of doping level in the 2DEG channel) a ballistic lateral current will be generated in the final InAs collector due to the preferential tunneling of spins on one side of k-space relative to the \[001̄\] direction. In the steady state, this ballistic current will be detected as a voltage at the side gates across the collector. The polarity of this voltage indicates the orientation of the initial spin polarization in the 2DEG. If no spin polarization survives following transport in the 2DEG, the tunnel current will have equal contributions on both sides of k-space, producing no voltage across the collector side gates. As this spin detection scheme relies only on a difference in population between the two spin states, it does not require ballistic transport in the InAs 2DEG channel.

Spin transistor action is achieved through control over the spin relaxation time in the 2DEG using the electric field-induced Rashba effect.Rashba:1984 ; Grundler:2000 ; Sato:2001 ; Nitta:1997 ; Heida:1998 ; Matsuyama:2000 ; Lau:JAP2002  The calculated $`T_1`$ for electrons in the (110) InAs/AlSb quantum well is shown in Fig. 3 as a function of the applied electric field. In the absence of the field, the precessional spin lifetime is extremely long because both the injected electron spins and the BIA crystal magnetic field are oriented primarily in the growth direction. For comparison, $`T_1`$ is more than 3 orders of magnitude smaller for the corresponding (001) InAs/AlSb quantum well,noteNIA  reflecting the in-plane orientation of the BIA magnetic field in (001) heterostructures. $`T_1`$ in (110) quantum wells is limited only by a very small, in-plane BIA magnetic field component that originates from contributions of higher than 3rd order in the electron wavevector. The applied electric field introduces structural inversion asymmetry that produces an in-plane Rashba magnetic field component,Lau:JAP2002  as shown in the inset to Fig. 3. This in-plane magnetic field induces rapid precessional relaxation of the growth-direction-polarized electron spins in the InAs 2DEG, thereby preventing detection at the final RIT spin filter. Because of the strong spin-orbit interaction in the AlSb barriers and the small band gap of the type II InAs/AlSb quantum well, the application of a relatively weak electric field leads to a sharp decrease in spin lifetime: $`T_1`$ falls by more than 2 orders of magnitude for E $`<`$ 5 kV/cm. This pronounced sensitivity of $`T_1`$ to the applied field may permit operation of the spin transistor proposed here with a low threshold gate voltage, representing a likely advantage over conventional transistor technology. It should be noted that the gate voltage only controls the spin decay rate associated with precessional relaxation, which is known to dominate in most III-V semiconductorsLau:2001 ; ALS:book ; OpticalOrientationBook  (including InAs/GaSb/AlSb heterostructuresLau:2001 ; ALS:book ; Olesberg:2001 ; Boggess:2000 ; Hall:1999 ) above 77 K. The residual relaxation rate due to other processes that may become important with the strong suppression of precessional relaxation in this (110) 2DEG (such as the Elliott-Yafet mechanism,Elliott:1954 ; Yafet:1963 ) will ultimately determine the requirements for the lateral dimension of the 2DEG transport channel and the minimum applied field required to produce the spin transistor action in the device proposed here.

In summary, we have proposed a non-magnetic semiconductor spin transistor that utilizes the characteristics of BIA effects in (110) III-V semiconductor quantum wells. Our demonstration that extremely large spin splittings associated with BIA in 6.1 Å semiconductor heterostructures are possible, together with the long spin lifetimes we calculate for these structures, illustrates the strong potential for applications of BIA in a wide range of (110) semiconductor spintronics device concepts. For example, because of the growth direction orientation of the electron spins in such structures, vertical emission spin-polarized light-emitting diodesFiederling:1999  may be realized based on BIA-mediated resonant tunneling spin filters such as that proposed here. A non-magnetic semiconductor spin valve may also be realized using a device similar to that in Fig. 1(a),note:spinvalve  in which the resistivity between the source and drain is controlled by the relative polarity of a bias applied to the side contacts of the injection and detection RIT structures. Due to the large g factor in InAs, the present device may also find application as a magnetic field sensor, in which the phase of coherent spin precession of electrons in the InAs channel in the presence of an external B field would be indicated by the magnitude and polarity of the voltage measured at the collector RIT. We estimate that a magnetic field as low as a few gauss may be measurable using such a device.

The authors thank D. Z.-Y. Ting for valuable discussions. This research is supported by the DARPA MDA972-01-C-0002, DARPA/ARO DAAD19-01-1-0490 and the Natural Sciences and Engineering Research Council of Canada.


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# A note on avoidable words in squarefree ternary words

## 1 Introduction

Let $`\mathrm{\Sigma }`$ be a finite, non-empty set called an *alphabet*. We denote the set of all words of finite length over the alphabet $`\mathrm{\Sigma }`$ by $`\mathrm{\Sigma }^{}`$. Let $`\mathrm{\Sigma }_k`$ denote the alphabet $`\{0,1,\mathrm{},k1\}`$; *e.g.*, $`\mathrm{\Sigma }_3=\{0,1,2\}`$.

A map $`h:\mathrm{\Sigma }^{}\mathrm{\Delta }^{}`$ is called a *morphism* if $`h`$ satisfies $`h(xy)=h(x)h(y)`$ for all $`x,y\mathrm{\Sigma }^{}`$. A morphism may be defined simply by specifying its action on $`\mathrm{\Sigma }`$. A morphism $`h:\mathrm{\Sigma }^{}\mathrm{\Sigma }^{}`$ such that $`h(a)=ax`$ for some $`a\mathrm{\Sigma }`$ is said to be *prolongable on $`a`$*; we may then repeatedly iterate $`h`$ to obtain the *fixed point* $`h^\omega (a)=axh(x)h^2(x)h^3(x)\mathrm{}`$.

An *square* is a word of the form $`xx`$, where $`x\mathrm{\Sigma }^{}`$. A word $`w^{}`$ is called a subword of $`w`$ if $`w`$ can be written in the form $`uw^{}v`$ for some $`u,v\mathrm{\Sigma }^{}`$. We say a word $`w`$ is *squarefree* (or *avoids squares*) if no subword of $`w`$ is an square.

It is easy to check that no binary word of length $`4`$ avoids squares. However, Thue  gave an example of a infinite squarefree ternary word. There are certain words that are avoidable in infinite squarefree ternary words and others that are unavoidable; *e.g.*, the word 101 is avoidable, whereas the word 012 is not. In the next section we characterize all words that can be avoided in infinite squarefree ternary words.

## 2 Results

###### Theorem 1.

Let $`w`$ be any infinite squarefree word over $`\mathrm{\Sigma }_3`$. Then $`w`$ contains at least one occurrence of each of the following words: 012, 021, 102, 120, 201, 210.

###### Proof.

This can be verified by an exhaustive computer search. It suffices to check all 34422 squarefree words of length 30 over $`\mathrm{\Sigma }_3`$. ∎

###### Theorem 2.

Let $`a`$, $`b`$, and $`c`$ be distinct letters of $`\mathrm{\Sigma }_3`$. Then there exists an infinite squarefree word over $`\mathrm{\Sigma }_3`$ that contains no occurrences of each of the words $`abca`$ and $`acba`$.

###### Proof.

It is easy to see that $`(abca,acba)\{(0120,0210),(1021,1201),(2012,2102)\}`$. Hence it suffices to show that there exists an infinite squarefree word over $`\mathrm{\Sigma }_3`$ that avoids 0120 and 0210, as we may simply rename $`a`$, $`b`$, and $`c`$ to get the desired avoidance. Consider the morphism $`h`$ defined as follows:

$`0`$ $``$ $`12`$
$`1`$ $``$ $`102`$
$`2`$ $``$ $`0`$
Then the fixed point $`h^\omega (0)`$ is squarefree and avoids 101 and 202. The only way to obtain 0120 from the morphism $`h`$ is $`h(202)=0120`$, but $`h^\omega (0)`$ avoids 202. Similarly, the only way to obtain 0210 is $`1h(11)2=102102`$, but $`h^\omega (0)`$ avoids the square 11. The result now follows. ∎

###### Theorem 3.

Let $`x`$ be any word over $`\mathrm{\Sigma }_3`$ such that $`|x|4`$. Then there exists an infinite squarefree word over $`\mathrm{\Sigma }_3`$ that contains no occurrences of $`x`$.

###### Proof.

It suffices to prove the theorem for $`|x|=4`$. Consider the set $`𝒜`$ of all squarefree words of length 4 over $`\mathrm{\Sigma }_3`$. We have $`𝒜=𝒜^{}𝒜^{\prime \prime }`$, where

$$𝒜^{}=\{0102,0121,0201,0212,1012,1020,1202,1210,2010,2021,2101,2120\}$$

and

$$𝒜^{\prime \prime }=\{0120,0210,1021,1201,2012,2102\}.$$

Note that all words in $`𝒜^{}`$ contain a subword of the form $`aba`$, where $`a`$ and $`b`$ are distinct letters of $`\mathrm{\Sigma }_3`$. It is well known that for any such subword $`aba`$, there exists an infinite squarefree word over $`\mathrm{\Sigma }_3`$ that avoids $`aba`$. Hence, for any word $`x𝒜^{}`$, there exists an infinite squarefree word over $`\mathrm{\Sigma }_3`$ that avoids $`x`$.

Now consider the set $`𝒜^{\prime \prime }`$. Note that all words in $`𝒜^{\prime \prime }`$ are of the form $`abca`$, where $`a`$, $`b`$, and $`c`$ are distinct letters of $`\mathrm{\Sigma }_3`$. Theorem 2 implies that for any such word $`abca`$, there exists an infinite squarefree word over $`\mathrm{\Sigma }_3`$ that avoids $`abca`$. Hence, for any word $`x𝒜`$, there exists an infinite squarefree word over $`\mathrm{\Sigma }_3`$ that avoids $`x`$. The result now follows. ∎


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# Transmission Phase Through Two Quantum Dots Embedded in a Four-Terminal Quantum Ring

## Abstract

We use the Aharonov-Bohm effect in a four-terminal ring based on a Ga\[Al\]As heterostructure for the measurement of the relative transmission phase. In each of the two interfering paths we induce a quantum dot. The number of electrons in the two dots can be controlled independently. The transmission phase is measured as electrons are added to or taken away from the individual quantum dots.

Two-terminal interference measurements in nanostructures do not allow the determination of the relative transmission phase due to the generalized Onsager relations M. Büttiker (1986). In a series of recent experiments it has been demonstrated Schuster et al. (1997); Buks et al. (1998); Ji et al. (2000, 2002) that in a multi-terminal geometry the relative transmission phase can be directly observed. In the quantum rings used in these experiments, two spatially separate transmission channels interfere and the phase difference of the corresponding transmission amplitudes can be detected by measuring Aharonov-Bohm (AB) oscillations. By using one of the two interfering paths as a reference the phase evolution in the other path can be studied, e.g. when a Coulomb blockaded quantum dot is embedded there Schuster et al. (1997). It was found that the transmission phase changes by about $`\pi `$ across a typical Coulomb blockade resonance and regularly exhibits so-called phase lapses between resonances. Similar experiments were carried out on a Kondo-correlated system in Refs. Ji et al. (2000) and Ji et al. (2002). A large number of theoretical papers (for a review see Hackenbroich (2001)) has addressed the issue of the phase lapses.

Here we investigate the phase evolution of a system of two quantum dots with negligible electrostatic interaction embedded in two arms of a four-terminal AB ring. Both arms of the ring including the two dots can be tuned individually. As a single electron is added to either of the two quantum dots by increasing the corresponding plunger gate voltage, the observed average phase shift is about $`\pi `$ but smaller shifts are also observed. In such a measurement one dot is kept on a conductance resonance while the phase evolution induced by tuning the other dot through a resonance is monitored. In contrast, if a single electron is added to each of the quantum dots simultaneously, the observed phase shift is close to zero, since the relative phase change in each arm is roughly the same.

The sample is a Ga\[Al\]As heterostructure containing a two-dimensional electron gas 37 nm below the surface. The lateral pattern was fabricated with the biased tip of an atomic force microscope which locally oxidizes the GaAs surface. Details of this fabrication technique are described in Ref. Fuhrer et al. (2002). Figure 1(a) shows an AFM micrograph of the oxidized pattern. Lateral gate electrodes labeled pg1 through pg4 are used to tune the conductance in each of the four segments of the ring. All measurements were carried out at 100 mK in a dilution refrigerator.

The ring was characterized in the open regime where each segment supports 2-4 lateral modes. Figure 2(a) shows a pronounced AB effect in a local measurement setup in which the current and voltage contacts are the same two terminals of the ring \[inset Fig. 2(a)\]. The period $`\mathrm{\Delta }B=\mathrm{\Phi }_0/A4.8`$ mT is in agreement with the area $`A=0.85`$ $`\mu `$m2 enclosed by the ring.

The non-local resistance was measured by passing a current through arm 2 and measuring the voltage drop across arm 4. This is shown in Fig. 2(b). In this case the AB-oscillations constitute only 2% of the total signal. In order to maximize the AB signal we therefore chose a different arrangement \[inset Fig. 2(c)\] similar to the one used in Ref. Schuster et al. (1997). Here a bias voltage $`V_\mathrm{b}`$ was applied to terminal A. The lower and upper contacts (B and D) were grounded via current-voltage converters measuring the currents $`I_\text{B}`$ and $`I_\text{D}`$. The non-local voltage $`V_{\mathrm{nl}}`$ was measured at terminal C. The amplitude of the AB-oscillations in $`V_{\mathrm{nl}}`$ \[Fig. 2(c)\] was found to be about 25% of the total signal.

We also characterized the four arms of the ring in the closed regime. To this end we measured the two-terminal conductance of each segment as a function of gate voltage when the arm on the opposite side was pinched-off by applying a strongly negative voltage to the corresponding plunger gate. In Fig. 3 the resulting conductance sweeps are shown. For low enough gate voltages clear Coulomb blockade oscillations are observed indicating the formation of a quantum dot in the arm tuned.

The location of the quantum dots can be estimated from the respective lever arms to each of the gates pg1 to pg4 which reveals that the dots form within the segments and not at the openings to the contacts. The lever arm for the gate closest to the corresponding dot is found to be $`\alpha _\mathrm{G}0.16`$, for the two adjacent gates the lever arm is about a factor of seven smaller and for the gate opposite the dot the lever arm is fourteen times smaller. From Coulomb blockade diamond measurements we find a typical Coulomb charging energy of 1 meV, which corresponds roughly to the area of a single segment in a disc-capacitor model.

In the following experiments we choose a regime where arm 1 and 2 are in the Coulomb blockade regime while the other two arms are left open and contain several lateral modes. We study a region in the plane defined by $`V_{\mathrm{pg1}}`$ and $`V_{\mathrm{pg2}}`$ close to a setting where both dots are tuned to a conductance maximum. This is shown schematically in Fig. 1(b) where the dashed lines mark the Coulomb peak positions. The numbers in brackets indicate the electron occupation of the two dots. In our measurements we first keep one dot on a conductance maximum while stepping through a conductance peak in the other dot (traces s1 and s2 indicated by the arrows). At the same time we detect the AB-oscillations in the non-local voltage for each value of the gate voltage. Figure 4(a) shows an example where dot 2 is tuned along trace s2. The current signals on the left of the figure show a peak in the current $`I_\text{B}`$, i.e. the current in the terminal closer to the tuned dot. The current $`I_\text{D}`$ shows a weak monotonous dependence on pg2, as expected. In the main part of the figure on the right, AB-oscillations in the non-local voltage as a function of magnetic field are shown for selected gate voltages (dashed lines in the left part of the figure). We find that for very small magnetic fields the amplitude of the AB-oscillations is suppressed and it is difficult to make a statement about a phase change between the curves. The numbered thin vertical lines are a guide to the eye and connect maxima in the uppermost trace with minima in the lowest trace. This indicates a phase shift by about $`\pi `$ as expected for the phase accumulation over a single isolated resonance Schuster et al. (1997); Hackenbroich (2001). While the shift is continuous and positive (from top to bottom) for line 1 we find a slightly smaller shift for line 2 over the whole range of sweeps. A shift by $`\pi `$ takes place over the middle three curves. A change in phase or frequency for different values of the magnetic field could mean that in a semiclassical picture different paths around the ring contribute to the interference signal as the magnetic field is tuned. This illustrates that from our data a magnetic field independent AB-phase cannot be unambiguously defined.

Along trace s1 \[Fig. 4(b)\] dot 1 is tuned while dot 2 is kept on a conductance resonance. Here, current $`I_\mathrm{B}`$ shows the expected flat behavior, but we observe a double peak structure in current $`I_\mathrm{D}`$. The phase change has the opposite sign compared to trace s2. For the vertical line 3 we find almost the expected phase change of $`\pi `$. For lines 1 and 2 the phase change is, however, smaller. While the magnetic field dependence of the phase needs further investigation we do find that the relative change of the transmission phase in both dots is the same as an electron is added to them. This means that the interference patterns are shifted in opposite directions. In order to verify this we show the results for a sweep along the diagonal trace d1 where two electrons are added simultaneously to both dots \[Fig 4(c)\]. For magnetic fields above 50 mT we find that the phase change over the conductance resonance is indeed $`0=\pi \pi `$ as expected (see vertical line 1). However, we again find that deviations from this behavior occur for small magnetic fields where we find a small shift of the phase (vertical line 2).

The design and fabrication process of our samples is different from the experiment by Schuster et al. Schuster et al. (1997). In contrast to their experiment we have a second dot in the reference arm of the interferometer which gives us additional control of the relative phase change. Our findings indicate that the shift of the transmission phase of both dots has the same sign when they are tuned over a conductance resonance and the electron occupation is increased. In agreement with our expectation, we find a negligible shift for trace d1 where the phase difference between the arms of the ring remains constant.

In conclusion, we have demonstrated that the phase evolution can be measured with individual control over the electron occupancy in each dot. While the general features are understood qualitatively, further work is needed to explain magnetic field dependent deviations from the theoretically expected phase changes.


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# Detecting percolative metal-insulator transition in manganites by resistive relaxation

## Abstract

We report an experimental study of the time dependence of resistivity of a La0.9Sr0.1MnO3 ultrathin film in order to elucidate the underlying mechanism for metal-insulator transition and colossal magnetoresistance CMR effect. There is a clear change of sign in the resistive relaxation rate across the metal-insulator transition driven by temperature or magnetic field. When measuring in increasing temperature or decreasing magnetic field, the resistivity increases with time in the metallic state but decreases with time in the insulating state. These relaxation processes indicate that the metal-insulator transition and the associated CMR are a direct result of phase separation and of percolation of the metallic phase.

Mixed-valence manganites of R1-xAxMnO3 (R is a rare-earth trivalent element, and A a divalent dopant) are a particularly important class of materials because of their scientific interest and potential technological applications.coey  For an intermediate doping region, an insulator-metal transition occurs at a temperature $`T_{IM}`$, marked by a peak in the electrical resistivity $`\rho `$. The system is insulating ($`d\rho /dT<0`$) above $`T_{IM}`$ and metallic ($`d\rho /dT>0`$) below $`T_{IM}`$. This phase change is accompanied by a transition from high-temperature paramagnetic (PM) to low-temperature ferromagnetic (FM) state at the Curie temperature $`T_C`$. Under the application of an external magnetic field, $`T_{IM}`$ shifts to a higher temperature and the resistivity is strongly suppressed. This gives rise to a huge magnetoresistance, called colossal magnetoresistance (CMR).

Although the theoretical understanding of the CMR phenomenon is still incomplete, double-exchange,zene  electron-phonon coupling,mill  and orbital effects maez  are commonly recognized as its main ingredients. Contrasting ground states can result from the combination of all these internal interactions. A subtle energy balance between some of the competing states may lead to the formation of electronic phase mixtures. Recent studies gork ; vare ; mayr ; heff ; savo ; dete ; ueha ; fath ; zhan  have provided accumulating evidence for the existence of phase separation in manganites. For example, it has been proposed theoretically gork ; mayr  that percolation should play an essential role in the transport properties. Scanning tunneling spectroscopy fath  and magnetic force microscopy zhan  have revealed the formation and evolution of percolation networks of metallic and insulating phases across the metal-insulator transition.

In this paper, we use resistive relaxation measurements to reveal the nature of the metal-insulator transition and CMR effect of La0.9Sr0.1MnO3, a compound which belongs to a composition range where the occurrence of phase separation has recently been proposed theoretically.okam  We discover resistive relaxation in both the insulating and metallic regions, with opposite relaxation rates in these two regions and a change of sign across the metal-insulator transition, driven by temperature and magnetic field. These experimental data imply phase separation in both insulating and metallic regions. They also indicate that the metal-insulator transition and the associated colossal magnetoresistance effect are the result of percolation of the metallic clusters imbedded into the insulating matrix.

The 50 $`\AA `$ La0.9Sr0.1MnO3 films used in our experiments were grown on a (100) SrTiO3 substrate with a pulsed laser deposition technique described previously. chen  Because the lattice constant of SrTiO3 is smaller than that of La0.9Sr0.1MnO3, the film grown on SrTiO3 is subject to compressive strain, resulting in a suppression of the charge and orbital ordering (CO) transition temperature $`T_{CO}`$ as well as a significant enhancement of $`T_{IM}`$ compared to the bulk. urus ; para  The epitaxially strained growth of these ultrathin films has been revealed by high-resolution transmission electron microscopy. The detailed structure analysis is presented elsewhere.chen1  Resistivity and magnetoresistivity measurements in zero field and under various magnetic fields up to 14 T have been performed through a conventional four probe method by using a Quantum Design Physical Properties Measurement System. The temperature stability was better than $`0.01\%`$ during the relaxation measurements.

The temperature dependence of the resistivity $`\rho (T)`$ measured in different applied magnetic fields is shown in Fig. 1. All these data are characterized by hysteresis, which is exemplified in the figure by the zero-field resistivity curves. Upon cooling from 400 K, the $`\rho (T)`$ curve exhibits a peak at $`T_{IM}=300`$ K, signaling the insulator-metal transition. At a lower temperature $`T_{CO}50`$ K, $`\rho (T)`$ displays a minimum, indicating the appearance of a low-temperature FM insulating-like state for $`T<T_{CO}`$. In this low temperature state, new structural reflections characteristic of CO appear in neutron yama  and x-ray endo  diffraction patterns. In warming from 2 K, the $`\rho (T)`$ curve is first below the cooling one, it overshoots the cooling curve around 305 K and exhibits a peak (metal-insulator transition) at $`T_{MI}=308`$ K. Such a behavior gives a clear indication of intrinsic phase inhomogeneity ueha ; zhan . An applied magnetic field $`H`$ suppresses the resistivity, shifts $`T_{MI}(H)`$ towards higher temperatures (see inset to Fig. 1), and, hence, gives rise to the CMR effect.

We measured the magnetization as a function of temperature up to 300 K in a magnetic field of 0.5 T using a Quantum Design Superconducting Quantum Interference Device magnetometer. The magnetization is still large ($``$70 emu/cm3) at 300 K compared to its saturation value of $``$300 emu/cm3 at low temperatures. This indicates that the Curie temperature $`T_C`$ of this film is above 300 K. A lower $`T_{IM}`$ value compared to $`T_C`$ has been previously reported in La1-xSrxMnO3 thin films.chen ; gonz  A possible explanation for $`T_{IM}<T_C`$ is the existence of microscopic phase segregation, with FM clusters embedded in PM insulating matrix. The FM clusters are large enough to give a magnetic contribution, but do not percolate for $`T>T_{IM}`$. Our relaxation data shown below support such a scenario.

Relaxation studies of the resistivity have proven to be an useful tool to investigate the dynamics of the competing superexchange and double-exchange interactions in manganites. vonh  The relaxation effect on the resistivity and magnetization of the half-doped manganites R0.5A0.5MnO3 has been studied recently in order to address nonequilibrium phenomena present in these systems.kawa ; smol ; ueha1 ; lope ; levy  Here, we use relaxation studies of the resistivity to elucidate the mechanism responsible for the metal-insulator transition in manganites. Figure 2 shows representative profiles of the relaxation of the resistivity measured in the presence of a magnetic field $`H=3`$ T at different temperatures in a warming run. The film was initially cooled to 2 K in the presence of the magnetic field. The temperature was then increased to the desired value at which the resistive relaxation measurement was performed. Then, the temperature was stabilized to the next desired value and the resistive relaxation measurement performed again. The resistivity increases with time for $`50T320`$ K and decreases with time for $`T330`$ K. Figure 3 shows the relaxation of the resistivity measured at a fixed temperature $`T=320`$ K for various magnetic fields in a decreasing field run. The resistivity increases with time for $`H3`$ T and decreases with time for $`H2`$ T. As shown in the inset to Fig. 1, the temperature of $`320`$ K is the metal-insulator transition temperature for a field of about $`2.2`$ T. Thus the system is in the metallic state for $`H3`$ T and $`T320`$ K, and in the insulating state for $`H2`$ T and $`T320`$ K. The decrease (increase) of the resistivity with time in the insulating (metallic) state is, therefore, obtained through both protocols: measuring the resistive relaxation at different $`T`$ while keeping $`H`$ fixed or at different $`H`$ while keeping $`T`$ fixed.

We performed a linear fit of all relaxation data with $`\rho (t)=\rho (t_0)+\eta t`$. Here $`t`$ is the relaxation time, $`\rho (t_0)`$ is the initial resistivity, and $`\eta `$ is the resistive relaxation rate, which is the only free parameter. Figures 4(a) and 4(b) show the variation of $`\eta `$ with $`T`$ measured in $`H=3`$ T, and with $`H`$ measured at $`T=320`$ K, respectively. As shown above, $`\eta `$ is positive in the metallic state, zero around the metal-insulator transition, as marked by the solid line and dashed region, and negative in the insulating state. The resistive relaxation rate has a maximum in the metallic state around 280 K, as shown in Fig. 4(a). The inset to this figure shows that the absolute value of CMR for the same field of 3 T is maximum around the same temperature. Also, both $`\eta `$ (see Fig. 4(b)) and the CMR (see Fig. 1), measured at a constant temperature, increase with increasing $`H`$ in the metallic state. These results indicate that there is a direct correlation between the behavior of the colossal magnetoresistance and the relaxation rate of the resistivity.

It is also interesting to note that $`\eta `$ decreases with decreasing temperature for $`T<280`$ K and approaches zero again at $`T=50`$ K (see Fig. 4(a)). Recalling that there is a minimum in the $`\rho (T)`$ curve at $`T_{CO}50`$ K (see Fig. 1), the relaxation of the resistivity also reveals the transition from the FM metallic state to the FM insulating-like state below 50 K.

One may consider whether the value of $`\eta `$ includes a contribution which is a result of temperature drift. To verify this point, we calculated the values of $`\rho /t`$ (hence $`\eta `$) which would be the result of temperature drift, from $`\rho /T`$ determined from $`\rho `$ vs $`T`$ curves in a magnetic field of 3 T and $`T/t`$ determined from the time dependence of $`T`$ recorded during the resistive relaxation measurements. These values of $`\eta `$ are two orders of magnitude smaller than those determined from the resistive relaxation measurements shown in Fig. 4(a). Thus, the contribution to $`\eta `$ from temperature drift is negligible.

Next we demonstrate that these resistive relaxation measurements point towards the scenario of phase separation and percolation in this compound. Specifically, these data show that the metal-insulator transition and the CMR effect of manganites are a direct result of intrinsic phase inhomogeneity over the whole measured temperature range and of the evolution of the relative volume of the insulating and metallic phases with temperature or magnetic field. The presence of resistive relaxation up to 400 K indicates that there are FM clusters in the PM region. The existence of FM clusters above $`T_C`$ has been detected by small-angle neutron scattering measurements.dete  These conductive FM clusters are embedded into an insulating host matrix. Upon lowering temperature or increasing magnetic field, the FM clusters grow and the ratio of FM metal to PM insulator becomes larger and larger. At a critical temperature or magnetic field, the conducting FM domains become interconnected across the whole sample, the percolation is established. Therefore, the resistivity exhibits a large decrease and the insulator-metal transition takes place. By further lowering temperature or increasing applied magnetic field, the fraction of the FM insulating phase decreases rapidly; accordingly, the fraction of the FM metallic phase increases. The existence of these electronically phase separated FM insulating and FM metallic phases in the low-temperature FM metallic region has been confirmed by measurements of Mössbauer spectroscopy,chec  muon spin relaxation,heff  and nuclear magnetic resonance. savo

When the system is warmed from low temperatures or field decreased from high values, the fraction of the FM metallic domains does not decrease as fast as it increased on the cooling run.zhan  Therefore, this fraction is larger than its equilibrium value for a certain temperature or magnetic field on both sides of $`T_{MI}`$. This gives rise to the hysteretic behavior of the resistivity both below and above $`T_{MI}`$ and to a larger value of the metal-insulator transition temperature, as depicted in Fig. 1. Also, since the fraction of the FM metallic domains is larger than its corresponding equilibrium value, with increasing time the resistivity in the metallic region increases, the metal-insulator transition temperature (the temperature corresponding to the threshold for percolation) shifts to lower temperatures (since the threshold for percolation does not change in time), and the resistivity in the insulating region decreases. As a result, the resistive relaxation rate is positive in the metallic state and negative in the insulating state with a change in sign across the metal-insulator transition, as shown by Fig. 4.

We should emphasize that the results presented are representative for the CMR manganites which have metal-insulator transitions, and not only for ultrathin films of La0.9Sr0.1MnO3. We have found similar resistive relaxations in both insulating and metallic regions of thicker films of the same composition and of bilayer La1.2Sr1.8Mn2O7 single crystal manganites.

In summary, our experimental data of La0.9Sr0.1MnO3 ultrathin films clearly show opposite resistive relaxation rates in the paramagnetic insulating state and the ferromagnetic metallic state, with a crossover in the sign of the relaxation rate around the metal-insulator transition. The experimental results provide strong support for the existence of phase separation in both insulating and metallic regions. Our findings, of a remarkable consistency between the effects of temperature and magnetic field, suggest that the metal-insulator transition and the negative colossal magnetoresistance are a result of the percolation of metallic ferromagnetic domains.

We thank G. Cristiani for growing the thin films, H. Zhang and C. L. Zhang for help in transport measurements, and M. Varela and J. Santamaria for TEM studies of our films. The work at KSU was supported by NSF Grant No. DMR-0102415.


text:
# The Life and Legacy of Pomeranchuk

## 1 Introduction

The life of Isaak Yakovlevich Pomeranchuk was short (20.05.1913 – 14.12.1966). But the impact of his personality and his works on physics and physicists is remarkable.

With better luck he could live today and even participate in this conference. It is difficult to imagine what would be the theme of his talk. The 36 years without him brought drastic changes in all aspects of life, science in general and physics in particular. But many of the talks at this conference have roots in the ideas and the thrust of Pomeranchuk.

All his life he was ready to start a new journey into the world of unknown. He went on many of them. Insatiable scientific curiosity was one of his dominant passions.

## 2 On the way to physics

Yuzik Pomeranchuk was born in Warsaw (at that time in Russia) on the eve of the World War I. His father was a chemical engineer, mother – medical doctor. In 1918 the family moved to Rostov-on-Don, later, in 1923, – to a town Rubezhnoe in Donets Basin, where his father worked as engineer at a chemical plant. In 1927 Yuzik graduated from 7-year school and two years later from a factory - and workshop school. In 1929-31 he was a worker at chemical plant. In 1931 he left Rubezhnoe for Ivanovo, a city some 300 km North-East of Moscow, and became a first year student of the Institute of Chemical Technology. In 1932 he moved from Ivanovo Institute to the second course of Physical-Mechanical Department of the Leningrad Polytechnical Institute. Here he specialized in chemical physics. Fellow students recalled that Yuzik enthusiastically worked 14 hours a day and led rather ascetic life. He searched in the library answers to questions which appeared during lectures and had a special gift of clearly explaining to his friends all difficult problems.

## 3 Yuzik, are you a theorist?

In 1934-35 his advisor became Alexander Iosifovich Shalnikov (1905 – 1986). Many years later academician Shalnikov recalled that he started by bringing Yuzik to a room full with old vacuum pumps glass-ware and leaving him there. Two weeks later, entering the room, Shalnikov found that everything that could be broken was broken. ‘Yuzik, are you a theorist?”, – uttered Shalnikov. “I don’t know. And what?” – was the answer.111This and future quotations are from the book “Vospominaniya o I.Ya. Pomeranchuke”, Moskva, Nauka, 1988 (in Russian), which contains recollections of 83 authors and 7 scientific reviews: describing the impact of Pomeranchuk on physics of elementary particles, quantum field theory, theory of nuclear reactors, synchrotron radiation, quantum liquids and crystals, heat conductivity in dielectrics.

Shalnikov and his wife bought a ticket and put Yuzik on a train to Kharkov, providing him with some money and food (it was a lean year). Kharkov was known at that time as a new center of theoretical physics led by the young Lev Davidovich Landau (1908 – 1968), who spent before a few years at the Niels Bohr Institute in Copenhagen and decided to create a similar cradle for young theorists in the Soviet Union, Yuzik became one of the first students of Landau. He passed the famous “theoretical minimum exams” in two months (for many others it took years) and published his first paper on light by light scattering, together with A. Akhiezer and L. Landau in 1936 in “Nature”.

Pomeranchuk was a devoted disciple of Landau. (The names Dau and Chuk were coined by Landau.) “I am ready to go after Dau to the Dickson island”, said young Chuk to one of his friends. (Dickson is an island in the Arctic Ocean near the shores of Siberia, at the mouth of Yenisey.) The mutual respect and affection thread runs all through their lives.

## 4 The 1936-1941 Firework

The “photon-photon” article started a firework of papers in various fields, such as cosmic rays, neutron scattering in crystals, conduction of heat and sound in dielectrics, electroconductivity of metals, superconductivity and other subjects.

The most unexpected was the discovery that there should exist an upper limit about $`10^{17}`$ eV on cosmic electron energy at the surface of the Earth due to emission of photons in the magnetic field of the Earth. Arkady Migdal recalled that when Pomeranchuk told him about his idea, he (Migdal) was convinced that such a weak field could not influence the trajectory of ultra-high energy particle. But intuition of Pomeranchuk turned out to be correct. This effect was the first in a series of famous works of Pomeranchuk on the theory of synchrotron radiation.

Among other results in condensed matter physics was the correction to Peierls $`1/T`$ law for heat conduction at high temperature $`T`$. “It was not pleasant, but it consoled me that I had been caught by very clever Pomeranchuk but not by somebody else”, recalled Rudolf Peierls.

Not everything, on which Pomeranchuk worked at that time, was published by him. In 1941 he gave three talks at a conference held in Moscow. The program of the conference was published in “Journal of Physics of USSR”. Two talks by Pomeranchuk “The production of mesotron pairs by positron annihilation” and ‘The scattering of mesotrons by mesotrons” are presented by the abstracts, while the third one “Nuclear reactions inside stars” is presented by the title only.

## 5 Wanderings: 1937 – 1946

In 1937 under the threat of arrest Landau left Kharkov for Moscow, to join the Kapitza Institute. Pomeranchuk followed him to become an assistant lecturer at the Moscow institute of tanning industry.

The transfer to Moscow delayed Landau’s arrest only by a year: in 1938 he was imprisoned. Only a letter by Peter Kapitza to Stalin saved Landau’s life, he spent in the prison a year.

After Landau’s arrest Pomeranchuk moved to Leningrad. In 1938-39 he is an assistant lecturer at Leningrad University, defending there in 1938 his PhD. In 1939-40 Pomeranchuk is a junior scientist at Leningrad Physical-Technical Institute. In 1940 he comes back to Moscow as a senior scientist at Lebedev Institute and defends his DSc dissertation “Heat conductivity and absorption of sound in dielectrics”. In 1941 the war started and Lebedev Institute was evacuated to Kazan. From there in 1942 Pomeranchuk was sent as a member of a group headed by Abram Isaakovich Alikhanov to Armenia. The task of the group was to initiate the construction of a station for study of cosmic rays at the Aragats mountain. They were on their way to Armenia during the Stalingrad battle. In Yerevan Pomeranchuk together with A.F. Kirpichev wrote three papers on the theory of cosmic ray showers.

In May 1943 Pomeranchuk returned to Moscow to become a member of the Kurchatov team, working on the first Soviet nuclear reactor. He worked with Igor Vasilyevich Kurchatov at what was called Lab. No.2 and is now called Kurchatov Institute till the beginning of 1946. For the rest of his life he stayed at what then was called Lab. No.3 and is now called ITEP being the founder and head of the ITEP theory division. Also in 1946 Pomeranchuk became Professor of theoretical physics at Moscow Mechanical Institute (at present MEPHI).

## 6 Neutrons in 1940s

Since 1943 Pomeranchuk was the leader of nuclear reactor theory in Soviet Union. He developed the theory of exponential experiments which allowed Kurchatov to measure the neutron absorption in moderator and the value of moderation length.

Neutrons became dominant in his work in 1940s. Together with I. Gurevich he created a theory of resonance absorption of neutrons in heterogeneous nuclear reactor with natural uranium. The construction of the first Soviet reactor completed in 1946 was based on this theory. (It was published as a report at the International conference on peaceful applications of atomic energy in 1955.) The theory of neutron absorption in homogeneous media was developed by Pomeranchuk and Akhiezer in the manuscript “Introduction to the theory of neutron multiplying systems”, ITEP, 1947. It served as a basic manual for construction of Soviet nuclear reactors for many years. I remember using it as a novice calculating nuclear reactor for China in the middle of 1950s. At that time its single copy was worn out to pieces. In 2002 the book was ultimately edited and published by B. Ioffe and A. Gerasimov. A part of this manuscript was published as a separate book: A. Akhiezer and I. Pomeranchuk “Certain problems of nuclear theory” in 1948 and then in 1950. Theory of nuclear reactors was the main practical task of the theory division created at ITEP by Pomeranchuk who recruited V. Berestetsky, A. Galanin, B. Ioffe, A. Rudik. The non-reactor physics was considered as a kind of a hobby.

## 7 “Hobby problems” in 1940s

The number, variety and quality of these “hobby problems” is quite impressive: Pomeranchuk continued his research on phonons (heat and sound conduction), on cosmic rays (on the atmospheric showers), on spectrum of synchrotron radiation at electron accelerators. He published two articles: on maximal energy of electrons in a betatron (1944, together with D. Ivanenko) and on spectrum of synchrotron radiation (1946, together with L. Artsimovich). By the way, V. Vladimirsky found in 1948 that maximal energy of showers produced by cosmic electrons in the atmosphere can be much larger than the Pomeranchuk limit for a primary electron, because above $`10^{18}`$ eV the quantum of radiation carries substantial part of electron’s energy. Pomeranchuk helped him to publish this result.

New themes appeared:

The first theme: liquid helium, in particular helium-3. In 1948 he established that both 3He and 6He admixtures to 4He belong to normal (non-superfluid) component of liquid helium. This research culminated by the famous 1950 paper in which Pomeranchuk has put forward the idea that the entropy of helium-3 is smaller in liquid state than in the solid one and suggested his method of reaching microkelvin temperatures. (The nuclear spins of 3He should be aligned in the liquid phase (due to exchange forces) and not aligned in the solid phase. Hence entropy of the latter is larger.)

Implementation and development of these ideas were crowned in 1996 by Nobel Prize to David Lee, Douglas Osheroff and Robert Richardson for their discovery of superfluidity in helium-3. We have the privilege to listen today to the talk of Professor Osheroff.

The second theme: 1945, the finite size atomic nuclei with $`Z>137`$. Y.A. Smorodinsky who coauthored this article recalled that Pomeranchuk’s enthusiastic exclamation “It would be great to collide two uranium nuclei!” was met by laughter: nobody believed in such experiments. They were done much later in Darmstadt.

The third theme: 1948, selection rules in the decay of positronium (the three photon decay of orthopositronium and two photon decay of parapositronium).

## 8 Arzamas-16

Early in 1950 Pomeranchuk was sent to the atomic weapon center at Arzamas-16. The order was signed by Stalin. Pomeranchuk longed for his family (wife and his stepdaughters) and for “hobby physics”. He used to come to N. Bogolubov (they lived in the same hostel) to discuss with him how to revoke the order. Bogolubov entertained him with a cup of excellent strong coffee and aphoristically uttered: “Orders are not revoked, usually they are forgotten”. Within a year Pomeranchuk was again in Moscow, at ITEP.

## 9 QFT and zero charge

Pomeranchuk enthusiastically reacted to the breakthrough in quantum field theory. In 1951 he set up a special seminar to study the relativistic covariant technique originated by Feynman, Dyson, Schwinger and others. He used it in two different ways: to elucidate the basic problems of the renormalization procedure and to apply it to various specific phenomena.

On the first way he and Landau discovered the fundamental difficulty which they dubbed “zero charge”, and which is now referred to as “triviality problem”. They found that any finite value of “bare charge” (at short distances) results in a vanishing “physical charge”, i.e. in the absence of interaction (at observable distances). This property was established first in quantum electrodynamics, then in various types of meson theories. An important role at this stage was played by V. Sudakov and K. Ter-Martirosyan who joined ITEP in the 1950’s.

Only in the early 1970’s it became clear that the non-abelian gauge theories do not suffer from this fatal disease. As you go to shorter distances the non-abelian charges decrease providing “asymptotic freedom”. But even today the disease discovered by Pomeranchuk and Landau is not eradicated. It is hiding in the Higgs sector of the electroweak interaction. The fight against this disease is one of the driving forces of the modern field theory.

## 10 Applications of QFT and $`S`$-matrix

In spite of unsolved “zero charge” basic inconsistency Pomeranchuk vigorously applied QFT to various phenomena which did not “feel” this inconsistency. Together with A. Galanin in 1952 he calculated the energy shift in muonic atoms due to polarization of vacuum by virtual photon. He modified in 1951 the approach suggested by E. Fermi to multiple production of pions at high energies.

Pomeranchuk paid great attention to the characteristic time intervals at which various processes took place. In 1953 together with L. Landau he found how the standard Bethe-Heitler formula for Bremsstrahlung cross section is modified in a medium. The characteristic time of the process is $`E^2/m^2\omega `$, where $`E`$ – energy of the electron, $`m`$ – its mass, and $`\omega `$ – frequency of the photon. At high enough energy the emission length becomes so large that multiple scattering is essential. Further refinement of the problem was done by A. Migdal. The LPM-effect is under active study even at present.

In 1953 Pomeranchuk was elected corresponding member of Soviet Academy. He became full member (academician) in 1964.

In 1950’s Pomeranchuk analyzed diffraction processes in the collisions of nucleons at high energies and peripheral collisions with one-pion and two-pion exchange. Here he relied on dispersion relations, which follow from such general principles as causality and conservation of probability (analiticity and unitarity of $`S`$-matrix).

On the basis of dispersion relations and of assumption that the radius of a particle does not increase with its energy he proved in 1958 his famous theorem, according to which the cross-sections of a particle and its antiparticle on a given target are equal to each other at asymptotically high energy.

Pomeranchuk theorem gave a strong impetus to experiments and theory in particle physics, to building high energy accelerators and colliders. In 1958 the highest energy was about 1 GeV. Today it is measured by TeVs.

## 11 Pomeron

Theoretical analysis has shown quite soon that the assumption that the radius of, say, proton does not depend on energy, is too naive. It should increase as logarithm of energy. But asymptotic equality of particle and antiparticle cross-sections discovered by Pomeranchuk remained valid.

The asymptotic behaviour in $`s`$-channel depends on the angular momentum $`j(t)`$ of quasi-particles exchanged in $`t`$-channel ($`s=E^2`$, $`t=q^2`$): $`s^{j(t)}`$. This angular momentum depends on $`t`$, forming in the plane $`j,t`$ the so-called Regge-trajectory. Hadrons with integer spin (mesons) and half-integer spin (baryons) lie on these trajectories.

The behaviour of total cross-section depends on the value of $`j`$ at $`t=0`$ of the trajectory with all quantum numbers (charge, isospin, $`C`$-parity) of the vacuum. It was M. Gell-Mann who suggested to call this vacuum trajectory the Pomeranchuk trajectory. The corresponding quasi-particle is referred to as pomeron in the literature.

Pomeranchuk published about a dozen articles on reggeonic theory of strong interactions (most of them with Vladimir Naumovich Gribov (1930-1997)). The first of these articles was published in 1962, the last – after Pomeranchuk passed away.

During last four years of Pomeranchuk’s life his collaboration with Gribov was fantastically intense. Gribov, who lived in Leningrad, regularly came to ITEP, a few times Pomeranchuk took train to Leningrad. Their discussions in Pomeranchuk’s office at ITEP lasted late into the night. Both of them were heavy smokers. A cigarette was lighted from the previous one. The smoke in the room was thick. Many years later J. Björken wrote that those brilliant works had cleared the mist in the minds of theorists at Berkeley and brightly demonstrated the extremely high level of research in certain fields in the Soviet Union.

## 12 His disciples

Pomeranchuk influenced the development of physics not only through his articles. He was a Great Teacher. Being the head of theory division at ITEP, he at the same time was a Professor of theoretical physics at Moscow Engineering Pysics Institute (MEPHI), which is hosting this memorial conference. His former students were A. Rudik, I. Kobzarev, M. Terentyev, Yu. Nikitin, A. Kaidalov, Yu. Simonov, Yu. Vdovin, I. Dremin, V. Mur, E. Zhizhin, A. Berkov, B. Karnakov, I. Zuckerman and among many others myself.

When in 1951 Pomeranchuk was designated to become the head of the theory group in Dubna he brought with him one of his MEPHI students S. Bilenky. For about a year Pomeranchuk used to come to Dubna every week as a part time job. Among his disciples there was L. Lapidus. Pomeranchuk strongly influenced the work of R. Ryndin and of many experimentalists. According to recollections of B. Pontecorvo, V. Dzhelepov and many others each visit by Pomeranchuk was a remarkable event in the life of physicists in Dubna, who remembered his improvised seminars for many years.

ITEP theory division attracted also students from Moscow University. The most prominent of them are B. Ioffe, M. Marinov and V. Popov.

The personality of Pomeranchuk is unforgettable to everybody who had the luck to work with him, to listen to his lectures, or even only to meet him. He was extremely devoted to physics and at the same time he was very human. Great integrity was fused in him with sincere sympathy, with rare sense of humor. Many of his jokes help us at ITEP to live through hard times.

## 13 Fight against cancer

Pomeranchuk did not look an athlete, but he was strong, of great endurance and of great courage. In the fall of 1965 doctors discovered that he was fatally ill: cancer of esophagus. For more than a year he underwent chemotherapy, radiotherapy, surgery (gastrotomy). But he continued to do physics in hospitals and at home till his last day.

During the tragic days and nights of his illness Pomeranchuk was cared for by his stepdaughter Marina who fought for his life with inexhaustible energy. Today Marina Alexeevna Ivanova-Pomeranchuk is with us in this hall.

Being treated by gamma-rays he thought about the Bragg peak in stopping proton beam. It was obvious for him that protons, unlike electrons or gamma-rays, would deliver most of their energy at the end of their track inside the tumor. He summoned physicists from ITEP and Dubna together with radiologist in the Oncological Center to start the program of proton therapy at the existing proton accelerators. Unfortunately it was too late to help him. But he thought about others. The first medical proton beam started to operate at ITEP in 1969. More than 3000 patients were successfully treated at ITEP. Recently special centers for proton therapy were built in Western Europe and USA.

## 14 Pomeranchuk Prize

In 1998 Pomeranchuk Prize was established at ITEP. Up to now the international jury awarded it to ten physicists:

A. Akhiezer, S. Drell (1998)

K. Ter-Martirosyan, G. Veneziano (1999)

E. Feinberg, J. Bjorken (2000)

L. Lipatov, T. Regge (2001)

L. Faddeev, B. DeWitt (2002)

Professor B. DeWitt will receive the Prize today. Professor L. Faddeev – at the ITEP International Winter School in February.

The names of 2003 prize winners will be announced on 20th of May 2003, Pomeranchuk’s 90th birthday.

The constellation of laureates sheds a special light on the legacy of Pomeranchuk: on his formulas and ideas in various fields of physics, on his style of research marked with deep intuition, ingenuity and hard work, on his devotion to physics, his integrity, his striving to the heart of the matter, combined with painstaking attention to details, his gift of a great teacher who shared his enthusiasm and knowledge with his disciples and peers.

## 15 Addendum

List of scientific publications by I.Ya. Pomeranchuk222This is a translation into English of a list published in the third volume of Scientific Works (SW) by I.Ya. Pomeranchuk, “Nauka”, Moskva, 1972 (in Russian).

1936 – 1941

1. On properties of metals at very low energies. (With L.D. Landau.) ZhETF 7 (1937) 379; Phys. Zs. Sowjet. 10 (1936) 649. (SW, 1, 1).333This is a reference to the volume and the number of the article in SW.
2. Light by light scattering. (With A.I. Akhiezer and L.D. Landau.) Nature 138 (1936) 206 (SW, 2, 33).
3. Coherent scattering of $`\gamma `$-rays by nuclei. (With A.I. Akhiezer.) ZhETF 7 (1937) 567; Phys. Zs. Sowjet. 11 (1937) 478 (SW, 2, 34).
4. On the scattering of slow neutrons in a crystal lattice. ZhETF 8 (1938) 894; Phys. Zs. Sowjet. 13 (1938) 65 (SW, 1, 25).
5. Critical field in superconductors of small size. ZhETF 8 (1938) 1096 (SW, 1, 2).
6. On the maximal energy which the primary electrons of cosmic rays can have on the earth’s surface due to radiation in the earth’s magnetic field. ZhETF 9 (1939) 915; J. Phys. SSSR 2  (1940) 65 (SW, 2, 41).
7. The influence of a magnetic field on the electrical conductivity of bismuth single crystals at low temperatures. (With B.I. Davydov.) ZhETF 9 (1939) 1294; J. Phys. USSR 2 (1940) 147 (SW, 1, 3).
8. On the end of mesotron track in Wilson chamber. (With A.B. Migdal.) Dokl. AN SSSR 27 (1940) 652; Phys. Rev. 57 (1940) 934 (SW, 2, 42).
9. The thermal conductivity of the paramagnetic dielectrics at low temperatures. ZhETF 11 (1941) 226; J. Phys. USSR 4 (1941) 357 (SW, 1, 7).
10. On the thermal conductivity of dielectrics at the temperatures higher than the Debye temperature. ZhETF 11 (1941) 246; J. Phys. USSR 4 (1941) 259 (SW, 1, 8).
11. Sound absorption in dielectrics. ZhETF 11 (1941) 455; J. Phys. USSR 4 (1941) 529 (SW, 2, 9).
12. The production of mesotron pairs by positron annihilation. J. Phys. USSR 4 (1941) 277.
13. The scattering of mesotrons by mesotrons. J. Phys. USSR 4 (1941) 277.
14. Nuclear reactions inside stars. J. Phys. USSR 4 (1941) 285.
15. On conduction of heat in dielectrics. Phys. Rev. 60 (1941) 820 (SW, 1, 10).

1942 – 1946
16. On conduction of heat in dielectrics below Debye temperature. ZhETF 12 (1942) 245; J. Phys. USSR 6 (1942) 237; Izvestiya AN SSSR, physical series 6 (1942) 77 (SW, 1, 11).
17. Conduction of heat in dielectrics at high temperatures. ZhETF 12 (1942) 419; J. Phys. USSR 7 (1943) 197 (SW, 1, 12).
18. Dependence of sound absorption in dielectrics on frequency and temperature. J. Phys. USSR 7 (1943) 266 (SW, 1, 13).
19. Coulomb forces and neutron structure. Dokl. AN SSSR 41 (1943) 162 (SW, 2, 54).
20. Spectrum of soft component in the air at high energies. (With A. Kirpichev.) Dokl. AN SSSR 41 (1943) 19 (SW, 2, 43).
21. On the theory of transition effect in cosmic rays. (With A. Kirpichev.) Dokl. AN SSSR 42 (1944) 396 (SW, 2, 44).
22. On the theory of absorption of infrared rays in center-symmetrical crystals. ZhETF 13 (1943) 428; J. Phys. USSR 7 (1943) 262 (SW, 1, 14).
23. On the screening of effective cross sections of Bremsstrahlung and pair production calculated with experimental data on atomic form factors. (With A. Kirpichev.) Dokl. AN SSSR 45 (1944) 301 (SW, 2, 45).
24. Scattering of mesons strongly interacting with nucleons. Dokl. AN SSSR 44 (1944) 13 (SW, 2, 55).
25. On the conduction of heat in magnetically cooled salts. (With A.I. Akhiezer.) J. Phys. USSR 8 (1944) 216 (SW, 1, 15).
26. On thermal equilibrium of spins and lattice. (With A.I. Akhiezer.) ZhETF 14 (1944) 342; J. Phys. USSR 8 (1944) 206 (SW, 1, 16).
27. On the interpretation of experimental data on large avalanche showers. ZhETF 14 (1944) 252; J. Phys. USSR 8 (1944) 17 (SW, 2, 46).
28. Radiation of fast electrons in magnetic field. (With L.A. Artsimovich.) ZhETF 16 (1946) 379; J. Phys. USSR 9 (1945) 267 (SW, 2, 48).
29. On the maximum energy attainable in a betatron. (With D.D. Ivanenko.) Dokl. AN SSSR 44 (1944) 343 (SW, 2, 47).
30. On energy levels in systems with $`Z>137`$. (With Ya.A. Smorodinsky.) J. Phys. USSR 9 (1945) 97 (SW, 2, 35).
31. On the conduction of heat in bismuth. (With A.I. Akhiezer.) ZhETF 15 (1945) 587; J. Phys. USSR 9 (1945) 93 (SW, 1, 4).
32. On elastic scattering of fast charged particles by nuclei. (With A.I. Akhiezer.) ZhETF 16 (1946) 396; J. Phys. USSR 9 (1945) 471 (SW, 3, 96).
33. On elastic scattering of neutrons with energy of a few Kelvins in liquid helium II. (With A.I. Akhiezer.) ZhETF 16 (1946) 391; J. Phys. USSR 9 (1945) 461 (SW, 1, 18).
34. Radiation of relativistic electrons in magnetic field. Izv. AN SSSR, physical series 10 (1946) 316 (SW, 2, 49).

1947 – 1951
35. On scattering of slow neutrons in crystals. (With A.I. Akhiezer.) ZhETF 17 (1947) 769; J. Phys. USSR 11 (1947) 167 (SW, 1, 28).
36. Generalization of the limiting $`\lambda `$-process and ambiguity of elimination of infinities in quantum theory of elementary particles. ZhETF 17 (1947) 667; J. Phys. USSR 76 (1949) 298 (SW, 2, 56).
37. On the theory of resonance scattering of particles. (With A.I. Akhiezer.) ZhETF 18 (1948) 603 (SW, 1, 29).
38. On refraction of neutrons. (With A.I. Akhiezer.) ZhETF 18 (1948) 475 (SW, 1, 30).
39. On the motion of foreign particles in helium II. (With L.D. Landau.) Dokl. AN SSSR 59 (1948) 669 (SW, 1, 19).
40. On fluctuation of ionization ranges. ZhETF 18 (1948) 759 (SW, 2, 50).
41. Introduction into the theory of neutron multiplicating systems (reactors) (With A.I. Akhiezer.) ITEP Report, M., 1947; Moscow, Izd.AT, 2002.
42. Selection rules for annihilation of electrons and positrons. Dokl. AN SSSR 60 (1948) 213 (SW, 2, 36).
43. Certain problems of nuclear theory. (With A.I. Akhiezer.) M., Gostekhizdat, 1st edition, 1948; 2nd edition, 1950, 416 pp.
44. Effect of impurities on the thermodynamical properties of velocity of second sound in He II. ZhETF 19 (1949) 42 (SW, 1, 20).
45. A remark on scattering of particles with vanishing energy. ZhETF 18 (1948) 1146 (SW, 1, 31).
46. Lifetime of slow positrons. ZhETF 19 (1949) 183 (SW, 2, 37).
47. Radiation in the collision of fast neutrons with protons. (With I.M. Shmushkevich.) Dokl. AN SSSR 64 (1949) 499 (SW, 3, 80).
48. On the determination of non-electromagnetic interaction between electrons and neutrons. (With A.I. Akhiezer.) ZhETF 19 (1949) 558 (SW, 1, 32).
49. On the $`\beta `$-decay of neutron. (With V.B. Berestetsky.) ZhETF 19 (1949) 756 (SW, 2, 67).
50. Electromagnetic radiation caused by exchange forces. (With I.M. Shmushkevich.) Dokl. AN SSSR 70 (1950) 33 (SW, 3, 81).
51. On the theory of liquid $`^3`$He. ZhETF 20 (1950) 919 (SW, 1, 21).
52. Exchange collisions of fast nucleons with deuterons. I. ZhETF 21 (1951) 1113 (SW, 3, 82).
53. Exchange collisions of fast nucleons with deuterons. Dokl. AN SSSR 78 (1951) 249 (SW, 3, 83).
54. On conversion of charged $`\pi `$-meson into a neutral meson in collisions with proton and deuteron. (With V.B. Berestetsky.) Dokl. AN SSSR 77 (1951) 803; ZhETF 21 (1951) 1333 (SW, 3, 84).
55. On the theory of production of many particles in a single act. Dokl. AN SSSR 78 (1951) 889 (SW, 3, 105).
56. Capture of $`\pi `$-particle in a deuteron. Dokl. AN SSSR 80 (1951) 47 (SW, 3, 86).
57. On collisions of $`\pi `$-mesons with deuterons. (With V.B. Berestetsky.) Dokl. AN SSSR 81 (1951) 1019 (SW, 3, 88).
58. The conduction of heat in a fully ionized gas at high temperatures. (With V.B. Berestetsky and B.L. Ioffe) 1951 (SW, 1, 345).

1952 – 1956
59. On the theory of capture of $`\pi `$-particles by deuteron. ZhETF 22 (1952) 129 (SW, 3, 85).
60. Exchange collisions of flat nucleons with deuterons. ZhETF 22 (1952) 624 (SW, 3, 87).
61. On electrons emitted in the process of capture of $`\mu `$-mesons on atomic levels. (With B.L. Ioffe.) ZhETF 23 (1952) 123 (SW, 2, 38).
62. On the spectrum of $`\mu `$-mesohydrogen. (With A.D. Galanin.) Dokl. AN SSSR 86 (1952) 251 (SW, 2, 39).
63. On the emission of high energy $`\gamma `$-quanta in collisions of fast neutrons with protons. (With I.M. Shmushkevich.) Dokl. AN SSSR 87 (1952) 385 (SW, 3, 89).
64. On the paramagnetic dispersion. (With A.I. Akhiezer.) Dokl. AN SSSR 87 (1952) 917 (SW, 1, 17).
65. Emission of $`\gamma `$-quanta in collisions of fast $`\pi `$-mesons with nucleons. (With L.D. Landau.) ZhETF 24 (1953) 505; CERN Symp. 2 (1956) 159 (SW, 3, 97).
66. On external (diffraction) generation of particles in nuclear collisions. (With E.L. Feinberg.) Dokl. AN SSSR 93 (1953) 439 (SW, 3, 98).
67. Limits of applicability of the theory of Bremsstrahlung by electrons and production of pairs at high energies. (With L.D. Landau.) Dokl. AN SSSR 92 (1953) 535 (SW, 2, 51).
68. Electron-avalanche processes at superhigh energies. (With L.D. Landau.) Dokl. AN SSSR 92 (1953) 735 (SW, 2, 5).
69. Emission of photon in the capture of a fast proton by nucleus. (With A.I. Akhiezer.) Dokl. AN SSSR 94 (1954) 821 (SW, 3, 99).
70. Renormalization of mass and charge in covariant equations of quantum field theory. (With A.D. Galanin and B.L. Ioffe.) Dokl. AN SSSR 98 (1954) 361 (SW, 2, 57).
71. Semiphenomenological theory of production of $`\pi `$-meson pairs by high energy $`\gamma `$-quanta. Dokl. AN SSSR 96 (1954) 265 (SW, 3, 100).
72. Production of $`\pi `$-meson pairs by $`\gamma `$-quanta in heavy nuclei. Dokl. AN SSSR 96 (1954) 481 (SW, 3, 101).
73. On asymptotics of nucleon Green function in pseudoscalar theory with weak interaction. (With A.D. Galanin and B.L. Ioffe.) ZhETF 29 (1955) 51 (SW, 2, 58).
74. Generalization of Ward theorem for finite wave-length of light in the case of particles of spin 0. Dokl. AN SSSR 100 (1955) 41 (SW, 2, 59).
75. On the point interaction in quantum electrodynamics. (With L.D. Landau.) Dokl. AN SSSR 102 (1955) 489 (SW, 2, 60).
76. Vanishing of renormalized charge in quantum electrodynamics. Dokl. AN SSSR 103 (1955) 1005 (SW, 2, 61).
77. On renormalization of meson charge in pseudoscalar theory with pseudoscalar coupling. Dokl. AN SSSR 104 (1955) 51 (SW, 2, 62).
78. On vanishing renormalized meson charge in pseudoscalar theory with pseudoscalar coupling. Dokl. AN SSSR 105 (1955) 461 (SW, 2, 63).
79. Solution of equations of pseudoscalar meson theory with pseudoscalar coupling. ZhETF 29 (1955) 869 (SW, 2, 64).
80. Creation of $`\mu `$-meson pair in positron annihilation. (With V.B. Berestetsky.) ZhETF 29 (1955) 864 (SW, 2, 40).
81. On emission of $`\gamma `$-quanta in absorption of fast protons by nuclei. (With A.I. Akhiezer.) ZhETF 30 (1956) 201 (SW, 3, 102).
82. Vanishing of renormalized charge in electrodynamics and meson theory. Nuovo Cim. 3 (1956) 1186 (SW, 2, 65).
83. Isotopic invariance and scattering of antinucleons by nucleons. ZhETF 30 (1956) 423 (SW, 3, 106).
84. Isotopic invariance and cross section of interaction of high energy $`\pi `$-mesons and nucleons with nucleons. (With L.B. Okun.) ZhETF 30 (1956) 424 (SW, 3, 107).
85. Theory of resonance absorption in heterogeneous systems. (With I.I. Gurevich.) International Conference on peaceful use of atomic energy. Geneva, 1955. M.: Publishing house of Academy of Sciences of USSR, 1955, p.557 (SW, 1, 26).
86. Vanishing of renormalized charge in theories with point interaction. (With V.V. Sudakov and K.A. Ter-Martirosyan.) Phys. Rev. 103 (1956) 784 (SW, 2, 66).
87. Correlation effects in K-meson capture. (With V.B. Berestetsky.) ZhETF 31 (1956) 350 (SW, 2, 68).
88. Dispersion relations for the scattering of $`\pi `$-mesons on deuterons. (With B.L. Ioffe and A.P. Rudik.) ZhETF 31 (1956) 712 (SW, 3, 90).
89. On the number of different types of K-mesons. (With B.L. Ioffe and L.B. Okun.) Nucl. Phys. 2 (1956/1957) 277 (SW, 2, 69).
90. Note on the number of different types of K-mesons. Nucl. Phys. 2 (1956/1957) 281 (SW, 2, 70).
91. Inelastic diffraction processes at high energies. (With E.L. Feinberg.) Nuovo Cim. Suppl. 3 No.4 (1956) 652 (SW, 3, 103).

1957 – 1961
92. On the possible transition dipole moment of $`\mathrm{\Lambda }`$-particles. (With B.L. Ioffe.) Dokl. AN SSSR 113 (1957) 1251 (SW, 2, 71).
93. Equality of total cross sections of interaction of nucleons and antinucleons at high energies. ZhETF 34 (1958) 725 (SW, 3, 108).
94. On interaction of $`\mathrm{\Xi }`$-hyperons with nucleons and light nuclei. (With L.B. Okun and I.M. Shmushkevich.) ZhETF 34 (1958) 1246 (SW, 2, 72).
95. On determination of parity of K-mesons. (With L.B. Okun.) ZhETF 34 (1958) 997 (SW, 2, 73).
96. On the possibility to formulate the theory of strongly interacting fermions. (With A.A. Abrikosov, A.D. Galanin, L.P. Gorkov, L.D. Landau and K.A. Ter-Martirosyan.) Phys. Rev. 111 (1958) 321.
97. Diffraction effects in collisions of fast particles with nuclei. (With A.I. Akhiezer.) UFN 55 (1958) 593 (SW, 3, 104).
98. Green functions in meson theories. (With A.A. Abrikosov, A.D.Galanin, B.L. Ioffe and I.M. Khalatnikov.) Nuovo Cim. 8 (1958) 782.
99. On the stability of Fermi liquid. ZhETF 35 (1958) 524 (SW, 1, 22).
100. Isotopic effect in the residual electric resistance of metals. ZhETF 35 (1958) 992 (SW, 1, 5).
101. On interaction between the conducting electrons in ferromagnets. (With A.I. Akhiezer.) ZhETF 36 (1959) 859 (SW, 1, 6).
102. On peripheral interactions of elementary particles. (With L.B. Okun.) ZhETF 36 (1959) 300; Nucl. Phys. 10 (1959) 492 (SW, 3, 91).
103. $`\beta `$-interaction and the nucleon form-factor. (With V.B. Berestetsky.) ZhETF 36 (1959) 1321 (SW, 2, 74).
104. On collision of nucleons at high angular momenta. (With A.D. Galanin, A.F.Grashin and B.L. Ioffe.) ZhETF 37 (1959) 1663; Nucl. Phys. 17 (1960) 181 (SW, 3, 92).
105. Nucleon-nucleon scattering in two-meson approximation at high angular momenta. (With A.D. Galanin, A.F. Grashin and B.L. Ioffe.) ZhETF 38 (1960) 475 (SW, 3, 93).
106. On the limits of applicability of the transition radiation theory. (With G.M. Garibyan.) ZhETF 37 (1959) 1828 (SW, 2, 53).
107. On asymptotic dependence of cross sections at high energies. (With V.B. Berestetsky.) ZhETF 39 (1960) 1078; Nucl. Phys. 22 (1961) 629 (SW, 3, 109).
108. On the theory of scattering of slow neutrons in a Fermi liquid. (With A.I. Akhiezer and I.A. Akhiezer.) ZhETF 41 (1961) 644 (SW, 1, 23).
109. On processes of interaction of $`\gamma `$-quanta with unstable particles. (With I.M. Shmushkevich.) Nucl. Phys. 23 (1961) 452 (SW, 3, 94).
110. Phase analysis of $`pp`$-scattering at energy 95 MeV. (With V.A. Borovikov, I.M. Gelfand and A.F. Grashin.) ZhETF 40 (1961) 1106.
111. On electromagnetic interaction of neutral vector meson. (With I.Yu. Kobzarev and L.B. Okun.) ZhETF 41 (1961) 495 (SW, 2, 75).
112. On production of high energy beams of $`\pi `$-mesons. (With Yu.P. Nikitin and I.M.Shmushkevich.) ZhETF 41 (1961) 963 (SW, 3, 95).

1962 – 1966
113. Asymptotic behaviour of processes of annihilation and elastic scattering at high energies. (With V.N. Gribov.) Nucl. Phys. 33 (1962) 516; Intern. Conf. Theor. Aspects Very High Energy Phenomena. CERN, 1961, p.376; Preprint ITEP-61-15, M., 1961 (SW, 3, 110).
114. Complex angular momenta and relations between cross sections of various processes at high energies. (With V.N. Gribov.) ZhETF 42 (1962) 1141; Phys. Rev. Lett. 8 (1962) 343 (SW, 3, 111).
115. On certain properties of elastic scattering amplitudes at high energies. (With V.N. Gribov.) ZhETF 43 (1962) 308; Nucl. Phys. 38 (1962) 516 (SW, 3, 112).
116. Certain corollaries of the hypothesis of the moving poles for the processes at high energies (With V.N. Gribov, B.L. Ioffe and A.P. Rudik.) ZhETF 42 (1962) 1419 (SW, 3, 113).
117. On the scattering of slow neutrons in Fermi liquid. (With A.I. Akhiezer.) Nucl. Phys. 40 (1963) 139 (SW, 1, 24).
118. Spin structure of meson-nucleon and nucleon-nucleon scattering at high energies. (With V.N. Gribov.) ZhETF 42 (1962) 1682; Phys. Rev. Lett. 8 (1962) 412 (SW, 3, 114).
119. Regge poles and Landau singularities. (With V.N. Gribov.) ZhETF 43 (1962) 1970; Phys. Rev. Lett. 9 (1962) 238; Proc. Intern. Conf. High Energy Phys. Geneva, 1962, p.543 (SW, 3, 115).
120. Limitation on the rate of decrease of amplitudes in various processes. (With V.N. Gribov.) ZhETF 43 (1962) 1556; Phys. Lett. 2 (1962) 239; Proc. Intern. Conf. High Energy Phys. Geneva, 1962, p.522 (SW, 3, 116).
121. Om processes determined by fermionic Regge poles. (With V.N. Gribov and L.B. Okun.) ZhETF 45 (1963) 114 (SW, 3, 117).
122. Singularities of partial waves close to $`j=1`$ and behaviour of elastic scattering amplitude at high energies. (With V.N. Gribov and K.A. Ter-Martirosyan.) Phys. Lett. 9 (1964) 269 (SW, 3, 118). A remark to this paper: Phys. Lett. 12 (1964) 153 (SW, 3, 340).
123. Certain corollaries of unitary symmetry for processes involving $`\omega `$-, $`\phi `$\- and $`f^0`$-mesons. (With B.L. Ioffe and I.Yu. Kobzarev.) ZhETF 48 (1965) 375 (SW, 2, 76).
124. Moving branching points in the $`j`$-plane and Regge conditions of unitarity. (With V.N. Gribov and K.A. Ter-Martirosyan.) Yad. Fiz. 2 (1965) 361; Phys. Rev. 139 (1965) 184; Problems in elementary particle physics. Erevan, 1964, p.167 (SW, 3, 119).
125. Structure of $`j`$-plane near $`j=1`$ and diffraction scattering at high energies. (With V.N. Gribov and K.A. Ter-Martirosyan.) Preprint ITEP No.238, M., 1964.
126. “Shadow universe” and neutrino experiment. (With L.B. Okun.) Pisma v ZhETF 1 (1965) 28; Phys. Lett. 16 (1965) 338 (SW, 2, 77).
127. Electromagnetic mass differences of baryons and SU(6)-symmetry. (With A.D. Dolgov, L.B. Okun and V.V. Solovyev.) Yad. Fiz. 1 (1965) 730; Phys. Lett. 15 (1965) 84 (SW, 2, 78).
128. At which distances does the high energy interaction take place? (With V.N. Gribov and B.L. Ioffe.) Yad. Fiz. 2 (1965) 768 (SW, 3, 120).
129. On the possibility of experimental detection of mirror particles. (With I.Yu. Kobzarev and L.B. Okun.) Yad. Fiz. 3 (1966) 1154 (SW, 2, 79).
130. On total cross section of annihilation of electron-positron pairs into hadrons at high energies. (With V.N. Gribov and B.L. Ioffe.) Yad. Fiz. 6 (1967) 587 (SW, 3, 121).
131. The formula by Orear as a consequence of branching points in the $`j`$-plane (SW, 3, 122).
132. Limitation on the rate of increase of cross sections for weak interactions. Yad. Fiz. 11 (1970) 852 (SW, 3, 123).