STRUCTURAL FEATURES OF In<sub>x</sub>Ga<sub>1-x</sub>As FILMS GROWN WITH A METAMORPHIC BUFFER ON THE DIFFER ORIENTED GaAs SUBSTRATES
The results of an X-ray diffraction study of In<sub>0.53</sub>Ga<sub>0.47</sub>As epitaxial films grown on GaAs substrates with crystallographic orientations (100), (111)A using the step-graded metamorphic buffer are presented. A technique for determining the deformation parameters of the crystal structure of elastically strained In<sub>0.53</sub>Ga<sub>0.47</sub>As layers with (111)A crystallographic orientation based on high-resolution X-ray diffraction data has been developed. The deformation parameters of the crystal structure of the studied samples were determined.