THIN RESISTIVE FILMS BASED ON TANTALUM COMPOUNDS FOR MANUFACTURING POWERFUL RF LOADS AND ATTENUATORS
The article considers the features of production of thin films based on tantalum compounds, such as TaN, TaAlN. The study of optimal parameters of producing resistive TaN films deposited on a ceramic substrate of aluminum nitride is carried out. Thin film resistors with low surface resistivity are manufactured and tested. It determines their maximum specific power dissipation.