Effect of laser micro structuring process on electrophysical properties of SiO2/Si system
Electrophysical parameters of SiO <sub>2</sub>/Si system after irradiation by pulsed ytterbium fiber laser of ILI-1-50 type have been investigated. It is shown that in the silicon-silicon dioxide system under laser radiation a formation of defects occurs responsible for the appearance of different kinds of charges. It is found that laser-induced defects appear at sites remote from the irradiation zone as well. The defect generation rate at the silicon-silicon dioxide interface depends on their position in the energy band gap of silicon and reaches a maximum near the Fermi level.