Diffusion of interstitial magnesium in dislocation-free silicon
The diffusion of magnesium impurity in the temperature range T = 600-800° C in a dislocation-free singlecrystal silicon wafers of p-type was studied. As a source for diffusion, served the surface layer of a wafer doped by the ion implantation technique. The implantation was carried out at the ion energy 150 keV, fluences 5 • 10<sup>14</sup> and 2 • 10<sup>15</sup>cm<sup>-2</sup>. The diffusion coefficient of interstitial magnesium donor centers (D<sub>i</sub>) was determined by measuring the depth of p-«-junction, which was formed in a sample due to annealing for time t at a given T. As a result of investigation, the dependence D<sub>i</sub> (T) was found for the first time. The data showed that the diffusion process proceeds mainly via the interstitial mechanism.