PHOTODETECTOR ON THE BASE OF UNI-JUNCTION TRANSISTOR AND PHOTO-DIODE
The generators on the base of the uni-junction photo-transistor (UPhT) are used as the sensor-photo-detectors with the frequency output. The semiconductor crystal of the n-type conductivity contains two Ohmic base contacts of the n+-type conductivity as well as the injection emitter in a form ofp-n-junction (the region of the p+-type) with the electric contacts. The possibility to raise the linearity of the output signal and enlarge the sensitivity of the sensor on the base of UPhT was proposed through introduction of additional n+-region into p+-emitter.