MICROSTRUCTURING MECHANISM OF SiO <sub>2</sub>/Si SYSTEM UNDER IRRADIATION BY A SCANNING PULSED FIBER LASER BEAM
Microstructuring mechanism of SiO <sub>2</sub>/Si system under irradiation with a pulsed fiber ILI-1-50 laser using laser beam scanning mode is considered. The results of microstructuring are given with such radiation power when there is local melting - crystallization of silicon, but not SiO <sub>2</sub> film destruction. It is shown that at low radiation dose (radiation with convergent laser beams) silicon melting is localized on the silicon surface at structural defects, in particular, in places where the dislocations generated with laser irradiation exit on surface. It is also shown that by increasing the radiation dose the area of the melt zone increases at first, then the closure of these areas occurs and the formation of long narrow "channels" of the melt takes place. In this case SiO <sub>2 </sub>film acquires morphology of a structured silicon surface.