FEATURES OF CHANGING OF STRUCTURE AND FORMATION OF OXIDES AND LASER INFLUENCE
Using the method of X-ray analysis researched structural changes, which caused internal tensions surface layers of the silicon plate, as well as the dynamics of the emergence and growth of oxide formations subsequent thermal annealing: 200, 400m 600 <sup>0</sup> C in a different time interval and laser effects. It is found that under these conditions, the impact on the samples was observed structural changes, internal stresses of the surface layer of silicon wafer oxidation. It is established, the conditions of the primary structural change and the emergence of internal tensions. Heat treatment of silicon makes an appearance on the sample surface oxide formation, which take place in several stages. Continuous laser irradiation after the preliminary thermal annealing the sample is regarded as the effect of radiation on the system and influence on the subsequent oxidation processes. The close relationship of changes in the lattice parameters of the sample as a function of time and temperature, thermal annealing and subsequent laser exposure.