REDISTRIBUTION EFFECTS OF ION IMPLANTED AsIN SiO2-Si STRUCTURE
The effect of As accumulation in the near-surface silicon layers after ion implantation of SiO2-Si structures is analyzed. It is shown that the effect is due to Frenkel pairs stable splitting on opposite sides of the SiO2-Si interface. A model of As accumulation effect is developed, which is based on the mass transfer of As in the As-I pairs.