Investigation of the spectral characteristics of silicon photomultiplier tubes
Recently multipixel avalanche photodetectors, called silicon photomultipliers are often used to record optical radiation. The influence of ambient temperature and supply voltage on the spectral sensitivity and dynamic range of prototypes of silicon photomultipliers manufactured by JSC "Integral" (Republic of Belarus) and commercially available photomultipliers KetekRM 3325 and ON Semi FC 30035 has been investigated in this article. It was determined that the spectral sensitivity maximum of silicon photomultipliers is shifted to the short-wavelength region and corresponds to the wavelength of optical radiation of 470 nm. It is shown that an increase in the supply voltage leads to an increase in the sensitivity of the investigated photodetectors, and the dependence of the sensitivity on temperature manifests itself in different ways when exposed to optical radiation of different wavelengths.