The influence of the ion energy for the Si <sup>+ </sup>beam on the defect formation and solid-phase recrystallization near the silicon-sapphire interface
It has been researched the defect formation and subsequent solid phase recrystallization in silicon films on sapphire during irradiation with silicon ions at energies in the range from 170 to 230 keV at different temperatures of the substrate. Using the Rutherford back-scattering technique in combination with channeling it has been discovered that the total damage of the strongly defected region depends on the energy of implanted ions. The energy of disordering of the strongly defected region at the temperature of liquid nitrogen is 200 keV and at the room temperature is 230 keV.