Properties and potential applications of quasi-two-dimensional molybdenum disulfide for nanoelectronics elements
Currently the prospects of replacing traditional materials with quasi-two-dimensional compounds based on transition metal dichalcogenides are actively being studied. The quasi-two-dimensional molybdenum disulide MoS2,a semiconductor with a inite band gap, can be used as a stand-alone material, or as a part of layered heterostructures. When creating nanosized electronics elements of such ultra-thin materials, the application of atomic layer etching technology is of critical importance. In this paper, a brief description of the monolayer MoS2 properties in comparison with graphene and monolayers of hexagonal boron nitride is given. Based on the results of computer simulation by means of the quantum-mechanical method of the density functional theory, the efects caused in the MoS 2 monolayer by chlorine atoms and molecules, that are widely used in the state-of-art atomic layer etching technology for silicon materials, are demonstrated.