RESEARCH OF RESISTIVE SWITCHING EFFECT IN FORMING FREE TITANIUM OXIDE NANOSTRUCTURES
Electrode material influence on the effect of resistive switching in Ti/TiO<sub>2</sub>/upper electrode structure was investigated. It was shown, that using Pt as the top contact reduces the power consumption of the Ti/TiO<sub>2</sub>/upper electrode structure by 54.71 times compared to TiN, and reduces the power consumption by 63.66 times compared to C. The dependence of the titanium oxide nanoscale structures resistance on the number of switching at a single point, and the dependence of resistance on the number of points on the titanium oxide nanoscale structures surface are plotted. Analysis of the obtained results showed that for all materials of the top contact, when studying the effect of resistive switching at different points compared to the study at the single point, the HRS confidence interval increased by 9.87 %, in LRS by 40.08 % for Pt, HRS confidence interval increased by 27.67 %, LRS by 30.43 % for TiN, HRS confidence interval increased by 19.04 %, LRS by 46.65 % for C. An array of 16 resistive memory elements based on titanium oxide nanoscale structures was fabricated and investigated. The switching currents I<sub>SET</sub> = 20 nA, the voltage U<sub>SET</sub> = + 2.13 ± 0.15 V, and the voltage U<sub>RES</sub> = -2.93 ± 0.47 V are determined. The dependence of the memory element resistance on the switching number, and the dependence of the resistance on the element number are plotted. HRS was shown to be 10.28 ± 1.84 GΩ, LRS - 0.06 ± 0.02 GΩ. The HRS/LRS ratio of the manufactured resistive memory elements was 171. The obtained results can be used in the development of technological processes for the formation of resistive memory elements using probe nanotechnologies.