KINETIC SCHEMES FOR PARAMETERS MANAGEMENT OF IMPURITY-DEFECT STRUCTURE OF SILICON AND EXPERIMENTAL DATA
The data about interaction of point defects and admixture are presented. The short theoretical model and experimental results of electronic-microscopic researches of silicon plates after ionic implantation and annealing in a neutral and chemically active hydrogen medium is resulted. It is shown that annealing in chemically active medium results in reverse diffusion of admixture and the improvement surface structure of silicon area.