Epitaxial films of Nd<sup>3+</sup>:GGG and Cr<sup>4+</sup>:GGG for the use in neodymium lasers
An efficient technology was developed for growing the gadolinium gallium garnet (GGG) single-crystal films doped with Nd<sup>3+</sup> or Cr and Ca ions. The films with thickness up to 100<sub> </sub>μm have been grown by liquid-phase epitaxy method both on small (5-8<sub> </sub>mm) and big sizes (up to 76<sub> </sub>mm in diameter) undoped GGG substrates. The study of absorption, luminescence spectra and optical losses at the wave length of 1<sub> </sub>μm was carried as a function of growth process temperature and melt-solution composition. We demonstrated that Cr<sup>4+</sup> centers have been realized in epifilms and these films may be used as passive Q-switches for laser systems.