SOME FEATURES OF THE CHANGE IN ELECTRONIC AND OPTICAL PROPERTIES OF YTTRIA STABILIZED ZIRCONIA IRRADIATED WITH Au IONS AT LOW FLUENCE
Electrophysical properties are studied of yttria stabilized zirconia (YSZ) thin films (with a thickness of 12 nm) deposited on the silicon substrates by the RF magnetron sputtering method and irradiated with Au ions at 60 keV average energy and a fluence of 2.5<sup>.</sup>10<sup>16</sup> cm<sup>-2</sup>. Elevated electron conductivity channels caused by the ion implantation have been found in the films. It is shown that current-voltage characteristics of AFM probe-film tunnel junction measured in the channels may have some peaks. The channels disappear after 400<sup>o</sup>C air-annealing. These results are interpreted on the basis of the ones obtained earlier on the YSZ film electronic properties implanted by Zr ions and on optical properties of YSZ monocrystals containing metallic nanoparticles formed at Au implantation.