Analysis of 1D and 3D Distribution of Electric Potential in the Porphyrin-coated Silicon Nanowire Field-effect Transistors
In this paper, we have analyzed electric potential distributions in undoped silicon nanowire field-effect transistor (Si-NW FET) with a back-gate configuration covered by organic compound - porphyrin. Specifically we studied the 1D electrostatic potential along the different axes of the Si-NW FET for the subsequent investigation of electron transport characteristics.