SIMULATION OF CHARACTERISTICS OF A NANOPHOTONIC ELECTROOPTICAL MODULATOR ON A SILICON ON INSULATOR STRUCTURE
A promising approach to simulating characteristics of silicon nanophotonic modulators fabricated using a standard Silicon On Insulator (SOI) fabrication process is discussed. Optical characteristics of the waveguide structure are changed by means of the free-carrier dispersion effect. On the basis of numerical calculations, the device topological parameters are optimized for achievement of superior modulation characteristics.