Crosstalk dependence of a photosensitive layer thickness in InSb FPA
We investigated photoelectric crosstalk in 320´256 with pitch 30mkm and 640´512 with pitch 15mkm mid-wave IR range InSb FPA. The dependence of crosstalk value from the thickness of the InSb bulk structure has been determined. The crosstalk of epitaxial FPA elements is substantially less than that of bulk FPA elements.