METHOD OF MINIMIZATION OF PHYSICAL WEAR OF EEPROM-MEMORY FOR CONTROL DEVICE OF VOLTAGE TRANSDUCER
The article describes an application of memory cells for control device of voltage transducer. Modern methods of minimization of physical wear of EEPROM-memory, their merits and demerits are considered. The new method of wear minimization of memory and structure of the device is offered. The principles of operation based on this method are described.