Computer Modeling of Static Characteristics of Bipolar Transistor 2T937
The article sets out the methodology of modeling static input and output characteristics in the case of a crystal 2T937 bipolar transistor based on a common base model Gummel-Pune bipolar transistor. The article presents optimal values of the parameters of the equivalent circuit Gummel-Pune, the results of calculation of input and output static characteristics of the transistor. The results of the static characteristics of the simulation can be used as a first approximation for further solving the problem of optimizing the frequency characteristic ( S -parameter) transistor model Gummel-Pune.