Semiconductor Structures with One-Dimensional Quantum Channel and in-plane side gates fabricated with Pulse Force Nanolithography Method
Quasi-one-dimensional transistor structures with variable lateral potential profile have been created by impulse force nanolithography with the help of an atomic-force microscope. The structures were created on the bases of a AlGaAs/GaAs heterostructure with a deep (130nm from the surface) bedding of the two-dimensional electron gas. The potential profile of the channel was formed by means of sectioned planar gates on both sides of the channel. The electric parameters of the structures, measured at temperatures as low as 1.5 K, confirmed the effectiveness of the method for creating isolating regions with lateral sizes of approximately 10 nm