Morphology and Structural Properties of AlGaInSbAs Epitaxial Films Grownon InAs Substrates
There is discussed effect of growth conditions on a surface morphology and structural properties of AlGaInSbAs solid solution obtained on indium arsenide substrates. There are determinated optimal parameters of growth process (<i>T</i> < 873 K, <i>G</i> ≤ 60 K/cm, <i>l</i> > 80 мкм) of isoperiodic AlGaInSbAs films on InAs substrates with a high structural perfection <i>B</i><sub><i>H</i>/2</sub> < 30″ and a surface roughness of less than 12 nm. Effect of composition of epitaxial films of AlGaInSbAs on lattice mismatch of the film and InAs substrate was studied. It is shown that lattice mismatch between the film and the substrate increases with increasing gallium concentration in Al<sub><i>x</i></sub>Ga<sub><i>y</i></sub>In<sub>1 –</sub><sub><i>x</i></sub><sub>–</sub><sub><i>y</i></sub>Sb<sub><i>z</i></sub>As<sub>1 –</sub><sub><i>z</i></sub> solid solution and reaches the value of Δ<i>a</i> = 1.8 × 10<sup>–2</sup> Å. With changing antimony concentration, the lattice mismatch reaches Δ<i>a</i> = 7.2 × 10<sup>–3</sup> Å at <i>z</i> = 0.5 mol. frac.