Ivashkevich I., Tret'yak E. SPECTRAL ELLIPSOMETRY OF INHOMOGENEOUS SEMICONDUCTOR FILMS
The mathematical model is presented; it describes the heterogeneity in thickness of metal oxide films on semiconductor substrates in their study by spectral ellipsometry. The dispersion dependences of the refractive index n (λ) and absorption index k (λ) of zinc oxide films are determined in the spectral range 400-1000 nm. These films are formed by HF magnetron sputtering on silicon substrates with the substrate inclined to the magnetron axis. The geometric parameters of these films are also set.