Antireflection coatings for photodetectors based on InSb
The paper presents the results of the design of antireflection coatings on the surface of indium antimonies and their practical implementation using film-forming materials ZnS, YF<sub>3</sub>, Si and SiO<sub>2</sub> deposited by magnetron sputtering, electron beam and resistive evaporation. Refractive indices of the films used are determined. The spectral reflection characteristics of the obtained single-layer, two-layer, three-layer and more antireflection coatings in the mid-wave IR range were measured. The possibilities of minimizing the reflection from the surface of indium antimonites in the mid-wave IR spectrum are analyzed.