Features of Formation of SEM Images in a Mode of Secondary Slow Electrons.1. Structures with Large Side Wall Inclinations
The research of the images formation of silicon microstructures in scanning electron microscope in the secondary slow electrons and backscattered electrons collection mode is carried out. As researched object the test object MShPS-2.0Si was used. The test object consists of pitch structures (protrusions and grooves in silicon), which structures has the trapezoid form with the large side wall inclinations. Is shown that the signal of secondary slow electrons are formed on different laws on relief and not relief of surfaces. At the same time the signal of backscattered electrons are formed by an identical on relief and not relief of surfaces.