PHYSICAL-MECHANICAL MODELS OF DIMENSIONAL DEFECTS IN MICROELECTRONIC TECHNOLOGIES
The evaluation of the dimensions of a smallest solid crystal particle is used for substantiating a non-destructive method of measuring the surface energy of solid dielectrics. The theory of nano-dimensional effects in dielectric electronic devices makes it possible to determine stress concentration of the electric field in the vicinity of the tops of micro-convexes on the rough surface of electrodes of metal-dielectric-metal structures. This model may be useful in choosing the parameters of the technology of electro- adhesive joining of elements of integral micro-chips. The results calculated using the presented formulae are compared with experimental results.