The calculated method of estimation of resistance of bipolar devices to low-dose-rate ionizing radiation and use of conversion model
The exponent <i>m </i>of exponential function used in domestic calculated techniques (regulatory document РД В 319.03.37-2000 and industry standard of Russian space agency ОСТ 134) for estimation of resistance of bipolar integrated chips to low-dose-rate space radiation is calculated. This calculation is fulfilled with use of analytical relation following from conversion model of low-dose-rate effect in bipolar devices. It is shown that application of general-purpose value of exponent <i>m </i>= 0,26 isn't experimentally verified for most tested devices.