ON THE PHOTOSENSITIVITY DISTRIBUTION OVER THE INGAASSB/GASB EPITAXIAL STRUCTURES AREA
In the manufacture of photodiodes based on the heteroepitaxial structures with good electrical characteristics, a low-percentage yield of suitable was seen because of the photoelectric parameters failure. The results of the photosensitivity distribution over the area for the InxGa1-xAsySb1-y/GaSb structures for the values of x = 0.18 and y = 0.17 are presented the epitaxial structures were grown research by a liquid phase epitaxymethod. A description of the installation and a measurement technique based on the use of reference standards are given.To eliminate spurious photo EMF associated with the presence of wide-zone Substrate a germanium filter isusedin the installation. Clearly defined areas of high and low photosensitivity are detected on the plates. The spread of sensitivity values in different parts of the plate reached 3-fold value. The estimates of the absolute values of the current sensitivity of the best samples were close to the maximum possible. The proposed installation and research methods can be successfully used for development of the technology of liquid phase epitaxy and the plate quality evaluation during their delivery to the consumer.