A COMPARATIVE ANALYSIS OF DISSIPATED POWER OF STATIC MEMORY CELLS
The most widely used schemes of memory cells of static random access memory units of the type 6T, 8T, 9T and 10TM are introduced. The principle of the 6T type memory cell, as well as the main features of the rest of the memory cells are considered. A comparative analysis of the dependence of the memory cell dissipated power on the power supply voltage, temperature, and the operating frequency for the library with technological standards SAED EDK 28 nm is given. The results of modeling the considrerd memory cells for typical, slow and fast processes are introduced.. Modeling and calculations have been carried out by the software tool Hspice, as well as by using the models of the BSIM 4 transistors.