Formation of a multi-domain spatial structure in GaAs Gunn diode as a nonlinear phenomenon
Experimental studies of stationary distributions of the electric field intensity and the concentration of charge carriers in the Gunn diode have been provided by using nearfield microwave microscope. The numerical computer calculation of these quantities based on the dependence of electrons mobility and diffusion coefficient on the electric field has been carried out. The existence of a multidomain mode of Gunn diodes has been found experimentally and confirmed theoretically.