THE METHOD OF INCREASING THE DENSITY OF ELEMENTS IN SCHEMES OR NOT AND, FORMED ON THE BASIS OF FIELD HETEROTRANSISTOR
This work analyses the possibility of increasing the density of elements in schemes or Not and, formed on the basis of field heterotransistor. A method of increasing the density of the elements under consideration, based on the shape of the heterostructure under a specific configuration, the doping of necessary sites by diffusion and ion implantation and optimization of annealing of the impurities and/or radiation defects. A comparative analysis of the formation of these transistors by diffusion and ion implantation.