ANALYSIS OF CAPACITANCE-VOLTAGE HARACTERISTICS OF ZnO:RE THIN FILMS ON SILICONE SUBSTRATES BY THE THERMAN METHOD
ZnO thin films doped by rare-earth elements (erbium and europium) on silicone layers are obtained by the magnetron sputtering method on a direct current. MOS-structures are formed and their high-frequency capacitance-voltage characteristics are measured. Main parameters and surface states density spectra are obtained for Al-Ni/ZnO:RE/Si by the Therman method