The defect formation in the silicon doped by zirconium
By means of deep level transient spectroscopy and photocapacities methods it is investigated the defect formation in silicon with impurity Zr. It is revealed, that the diffusion introduction Zr in Si leads to formation of three deep levels (DL) with fixed energy of ionization Е<sub>с</sub>-0.22 eV,<sub> </sub>Е<sub>с</sub>-0.42 eV and<sub> </sub>Е<sub>v</sub>+0.30 eV, and last prevail two DL. It is revealed, that efficiency of formation of the deep centers connected with atoms Zr increases with increase in temperature of diffusion<sub> </sub>T<sub>diff</sub> and speeds of cooling after diffusion υ: the more<sub> </sub>T<sub>diff</sub> and<sub> </sub>υ, the more concentration of DL, connected with Zr.