FLIP CHIP INAS PHOTODIODES FOR OPERATION AT 20-100 °C and 2.7-3.7 mm
Fabrication of flip chip InAsSbP/lnAs heterostructure photodiodes witha 3.7 mm (20 °C) long-wavelength photosensitivity cutoff has been resported. The photodiodes can operate at up to 100 °C, the room temperature sensitivity maximum being at <i>X = </i>3.35 mm, with the zero shift resistance <i>R</i><sub><i>0</i></sub><i>= </i>1.1<i> </i>kOhm and the specific detectivity D<sub>λ</sub>* = 7.3 10<sup>10</sup>cm Hz<sup>1</sup>/<sup>2</sup>/W.