SIMULATING ELECTRONIC CIRCUIT PERFORMANCE UNDER RADIATION EXPOSURE
A procedure is proposed to account for the effect of neutron irradiation on electronic components by varying the parameters of their models. The formulas are given to calculate SPICE model parameters of a bipolar transistor and a semiconductor diode depending on the neutron fluence. Electric current generators are to be integrated into the electric circuits to take into account ionizing radiation effects. Simulation results for some circuit sections are presented.