An Effect of Crystallization Temperature on Ferroelectric Properties of PZT Films
An effect of crystallization temperature on ferroelectric properties of PZT films prepared by chemical solution deposition is studied. The samples annealed at 600-700 °C have typical hysteresis loops and CV characteristics. With the increase of crystallization temperature the remanent polarization, squareness of hysteresis loops, and leakage current are decreased, whereas breakdown voltage is somewhat increased