THE INFLUENCE OF DEFECTS ON THE ELECTRONIC PROPERTIES OF STRUCTURES OF LAYERED DICHALCOGENIDES OF REFRACTORY METALS
Computer modeling of the electronic structure of heterostructures made of individual layers of two-dimensional crystals of MoS<sub>2</sub>, WS<sub>2</sub>, WSe<sub>2</sub> and MoSe<sub>2</sub> is performed by means of first-principles methods. Two variants of the mutual arrangement of the layers of two-dimensional crystals are suggested. Properties of such heterostructures in the presence of impurities and defects are investigated.