Epitaxial GaInAs <i>/InAs Films Growth in the Temperature Gradient Field and Their Surface Research
<i>Experimental researches and mathematical modelling results of four-componental solid solutions GaInAs<i> growth on the basis of indium arsenide in the zone recryctallization conditions in the temperature gradient field are submitted. Distribution factors in the system Ga-In-As-Bi are determined for the first time. Influence of temperature, temperature gradient and a liquid phase structure on quality of solid solutions epitaxial layers is discussed. The epitaxial low-dimension structures growth model on two processes on the basis of a Monte Carlo method for the big initial ensemble is considered.</i>