DEPENDENCE OF THE PHOTOLUMINESCENCE POLARIZATION DEGREE IN InGaAs/GaAs QUANTUM WELL WITH MN ATOMIC MONOLAYER ON THE MAGNETIC FIELD FOR VARIOUS MONOLAYER POSITIONS
A model has been developed of photoluminescence polarization degree dependence in InGaAs/GaAs quantum well with a monolayer of Mn atoms on the magnetic field for various monolayer positions, being in a good agreement with recent experimental results. We consider both the microscopic structure of matrix elements for optical transitions with an account of exchange interaction effects being dependent on the Mn monolayer position, and the energy level populations at different reservoir temperature values taking into account nonequilibrium carrier distribution.