Double-level transistor assembling for microwave power amplifiers
The implementation of a double-level transistor assembling of microwave transistors with a peculiar design, studying the assembly electric characteristics and the analysis of the obtained results have been reported. The power addition of two one-watt FETs was obtained at 6 GHz frequency. The achieved results verify the correctness of a new concept of double-level chip mounting with a parallel inclusion of microwave semiconductor devices into microwave HICs.