Admittance of MIS structures based on MBE Hg<sub>1-<i>x</i></sub>Cd<i><sub>x</sub> </i>Te (<i>x</i> = 0.22-0.23) in a wide temperature range
The peculiarities of the electrical properties of n(p)-Hg<sub>1-x</sub>Cd<sub>x</sub>Te (x = 0.21-0.23) with the Al<sub>2</sub>O<sub>3 </sub>or SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4 </sub> insulator were considered. The HgCdTe films were grown by molecular beam epitaxy on substrates of GaAs (013) and Si (013). The possibilities of determining the main parameters of the MIS structures based on n(p)-Hg<sub>1-x</sub>Cd<sub>x</sub>Te (x = 0.21-0.23) with and without graded-gap layers from admittance measurements in wide temperature and frequency ranges were discussed.