The barrier n-ZnO/p-CuI heterostructure based on the electrodeposited in a pulsed mode zinc oxide nanoarrays and copper iodide films made by SILAR
Semitransparent p-CuI/n-ZnO barrier heterostructure investigated as a forward-looking device diode base for a near UV detector. The analyses of the crystal structure, electrical and optical properties of the pulse electrodeposited zinc oxide nanoarrays and copper iodide films made by SILAR were performed, on the base of which the n-ZnO/p-CuI barrier heterostructure sensitive to UV radiation in the spectral range 365-370 nm was created. By means of current-voltage characteristics the shunt resistance Rsh · S<sub>c</sub> = 879 Ω · cm<sup>2</sup>, the series resistance R<sub>s</sub> · S<sub>c</sub> = 8.5 Ω · cm<sup>2</sup>, the diode rectification coefficient K = 17.6, the rectifying barrier height of the p-n junction Ф = 1.1 eV and the ideality factor η = 2.4 were obtained. It is shown that the both recombination and tunneling of charge carriers are at small forward biases 0 < U < 0.15. When the voltage is above 0.15 V the transfer mechanism becomes tunnel-recombination. Values of the diode saturation current densities J<sub>0</sub> are 6.4 · 10<sup>-6</sup>mA · cm<sup>-2</sup> for the recombination and tunneling mechanism and 2.7 · 10<sup>-3</sup> mA · cm<sup>-2 </sup>for the tunnel-recombination mechanism of charge carrier transport.