INTERACTION OF THE ELECTRIC FIELD OF CHARGED DISLOCATIONS WITH IMPURITY ATOMS IN SEMICONDUCTORS
Interaction of the moving charged dislocations with impurity atoms in the semiconductor crystals at low temperatures was investigated. It is shown that the electric field of the dispositions excites electronic transitions between the energy levels of atoms, which results in the loss of energy. The expression was found for the damping force per unit length of the dislocation at low and high movement speeds.