DEPENDENCE OF THE GROWTH RATE OF SILICON WHISKERS ON THE TEMPERATURE IN THE OPEN Si-H-Cl SYSTEM
Whiskers are single crystals in which there are no dislocations, and their linear size is usually much larger than the transverse one. The quasi-one-dimensional shape, almost perfect perfection and the strength of whiskers close to theoretical values make them extremely attractive and, in many cases, irreplaceable objects for creating sensitive elements of sensors used in fire and security alarms. We have considered the temperature dependence of the growth rate of silicon whiskers in the framework of the growth model controlled by a chemical reaction at the liquid-gas interface. The experimental data presented in the work are interpreted as the temperature dependence of the yield of a heterogeneous chemical reaction. The results of this work can be useful for the controlled growth of whiskers.