The Impact of high dielectric permittivity of subgate dielectric on SOI CMOS nanotransistor characteristics
On the basis of numerical decisions characteristics of ultra short two gate SOI CMOS nanotransistors with thin undoped work area for an application case as subgate gate dielectric of materials with high value of dielectric permittivity are analyzed. The main attention is paid to the analysis of a level of manifestation shortly - channel effects and effects of sized quantization in not scalable of transistor characteristics