PHOTOCONDUCTIVITY OF SEMICONDUCTOR STRUCTURES GESN/SI WITH SELF-ORGANIZING QUANTUM POINTS
The report presents the results of experimental investigation of low- temperature lateral photoconductivity GeSn/Si structures with quantum dotes GeSn. It is observed a stepwise increase of photoconductivity, depending on the intensity of interband lights and applied electric field. The results are qualitatively explained in the framework of the theory of leak.