The interaction of silicon with the chemical elements, forming with it a binary connection
The presented method of calculation and the calculation results are compaction and concentration of electrons in the binary silicides on the basis of reference data on the density of matter in the condensed state. The obtained data allow to analyze the mechanism of formation of structure of binary silicides to further predict the characteristics of the created materials. On the basis of the calculations are encouraged to use the compaction factor and electron concentration as a structural material properties.