Evaluation of nonlinear scatterers sensitivity to probe radiation
Introduction. The nonlinear radar (NR) usage efficiency links with parameters influence of probe signal (PS) on the processes physics in nonlinear scatterers (NS). It is known that the variation of the PS power level of NS affects the distortion level of characteristics of NS semiconductor structures. The main part. Analytical modeling of scattering processes the response signal by NS on harmonics assumes usage the experimental semiconductor devises CVC for different power levels of PS. Using this data the approximation of semiconductor devices CVC by polynomial is done with subsequent finding the appropriate coefficients of nonlinearity. As a criterion of assessing the minimum of density of power flux level continuous PS of NS the minimum levels of nonlinear products of scattered signal are advisable to be chose n, for which the probability of detection and identification of NS exceed the value of 0.5. Analytical studies have shown that the density of power flux of the field, which scattered on the second and third harmonics, changes by a quadratic and cubic laws by varying the density of power flux of the incident wave. At fixed values 0 of field density of power flux on n-th harmonic increases with the coefficient of nonlinearity by the law 2n. Conclusion. According to the analytical calculations,20/23mWdB at 1rm (distance between the source of PS and the NS). Experimental studies have shown that the generation of the desired response signal will take place within 20/25...20mWdB  which consistent with the results of the theoretical calculations.