Modelling of Potential Distribution in Schottky Barriers Taking into Account Edge Effect
A technique for evaluating the electrostatic potential distribution in a semiconductor materials of a metal-semiconductor contact with a Schottky barrier, taking in account edge effect and spatially inhomogeneous distribution of electrically active impurities in a semiconductor has been developed. This technique allows to prognosticate the most probable mechanism of charge carrier transport through metal-semiconductor contact taking in account its topology and to model its voltage-current characteristics.