Investigation of the plasma chemical etching process of the bi-layered molybdenum-photoresist mask
The paper studies the plasma chemical etching process of the bi-layered molybdenum-photoresist mask for IR focal plane arrays (FPA) based on InGaAs 640´512. The investigation shows that after the plasma chemical etching process the layer density about dozens nanometers on the surface of the wafer remains which doesn’t yield further etching. In this paper presented the method of processing wafers with certain concentration solution of KOH after the plasma chemical etching that permit to remove this layer from the surface of the wafer and to proceed the further process.