NONEQUILIBRIUM PROCESSES AT DOPED THE SILICON SUBSTRATE OF MIS-STRUCTURES BY ZIRCONIUM
<i>Influence of atoms Zr on nonequilibrium processes in silicon MIS-structures is investigated. It is established, that presence Zr in MIS-structures leads to shift VFC, increase N</i><sub><i>ss</i></sub><i> and occurrence on spectra of distribution N</i><sub><i>ss</i></sub><i> (E</i><sub><i>g</i></sub><i>) three obviously expressed peaks in area energies with values of the E</i><sub><i>C</i></sub><i> - 0.22эВ, the E</i><sub><i>C</i></sub><i> - 0.27 эВ and Е</i><sub><i>v</i></sub><i> + 0.30 эВ. PACS: 81.05.-t, 71.55.-i.</i>