INFLUENCE OF SURFACE PRETREATMENT ON THE SURFACE CHARGE DENSITY AT THE INTERFACE BETWEEN MCT MBE AND AL<sub>2</sub>O<sub>3</sub> ALD
The influence of various Hg<sub>1-x</sub>Cd<sub>x</sub>Te surface treatments prior to Al<sub>2</sub>O<sub>3</sub> atomic layer deposition (ALD) on the interface charge density has been investigated. MIS structures with different surface pretreatments have been fabricated. The voltage-capacitance current-voltage characteristics have been measured, and the interface charge density has been calculated. Films with the surface composition х=0.22 with natural oxide have a nonuniform charge distribution over the surface varying within (0.8÷1.8)×10<sup>-8</sup> Q/cm<sup>2</sup>, which can cause inversion of the conductivity type near the surface. Treating MCT films with Hg vapor at room temperature causes negative charge formation in the interval (0.4÷1.6) ×10<sup>-8</sup> Q/cm<sup>2</sup>.