Causes of mechanical stresses in deposited by magnetron silicon carbide and aluminum nitride films
The results of internal stress determination in the aluminum nitride and silicon carbide films are presented. The effect of induced potential on the mechanical stress of films during magnetron deposition is shown. Feasible mechanisms of mechanical stress formation in films in terms of the induced potential are considered. It is shown that internal stresses in semiconductor films strongly depend on the ionized impurity electrodiffusion under the influence of the film potential gradient.