Electrical and thermal properties of photoconductive antennas based on In*Ga<sub>1-x</sub>As (x > 0.3) grown on metamorphic buffer for generation of THz radiation
We demonstrate the results of investigation electrical and thermal properties of photoconductive antennas for THz radiation based on low-temperature grown GaAs (LT-GaAs) and In<sub>x</sub>Ga<sub>1</sub>_<sub>x</sub>As with high indium content (x > 0.3) metamorphic buffer. It was shown that the power of Joule heating PH due to influence of dark current in In<sub>x</sub> Ga<sub>1</sub> _<sub>x</sub> As is 3-5 times higher than for LT-GaAs. This is due to high intrinsic conductivity of In<sub>x</sub>Ga<sub>1</sub>_<sub>x</sub>As at x > 0.5. We have also designed and fabricated special rigging with heat sink from a photoconductive antenna on a textolite plate. By means of numerical calculations we showed that the use of such a heat sink allows reducing the antenna temperature by 16% for LT-GaAs and 33% for In<sub>0</sub>.<sub>53</sub>Ga<sub>0</sub>.4<sub>7</sub>As.