Optimization of heterojunction bipolar transistors' structural parameters for rf amplifier's electromagnetic compatibility improvement
The influence of electrophysical, geometrical parameters and bias point of AlGaAs/GaAs heterojunction bipolar transistor on its blocking dynamic range was investigated. Also the change of gain and noise figure was considered. Using this investigation the method of parameter's choice was suggested for improvement of electromagnetic compatibility's characteristics of heterojunction bipolar transistor amplifiers.