The influence of the thickness of the semiconductor layer on the electrical, magnetical and magnetoresistive properties of the multilayer system {[(Co <sub>41</sub>Fe <sub>39</sub>B <sub>20</sub>) <sub>33.9 </sub>(SiO <sub>2</sub>) <sub>66.1</sub>]/[In <sub>35.5</sub>Y <sub>4.2</sub>O <sub>60.3</sub>]} <sub>93</sub>
The influence of the thickness of the semiconductor layer In <sub>35.5</sub>Y <sub>4.2</sub>O <sub>60.3</sub> on the electrical, magnetical and magnetoresistive properties of the multilayer system {[(Co <sub>41</sub>Fe <sub>39</sub>B <sub>20</sub>) <sub>33.9</sub>(SiO <sub>2</sub>) <sub>66.1</sub>]/[In <sub>35.5</sub>Y <sub>4.2</sub>O <sub>60.3</sub>]} <sub>93</sub> was invastigated. It was founded that the thickness of the semiconductor layer has a decisive significance for the studied properties. A physical model of the observed changes in the properties was proposed