Conduction mechanism of Ga<sub>2</sub>O<sub>3</sub>-GaAs heterojunctions
It is shown that conductivity of Ga<sub>2</sub>O<sub>3</sub>-GaAs heterojunctions is determined by thermionic emission from GaAs in the oxide film at positive gate potentials. At negative voltage bias conductance in Ga<sub>2</sub>O<sub>3</sub>-GaAs junction is due to thermal field emission in GaAs. In the region of high electric fields tunneling of electrons through the top of potential barrier activated with phonons dominates.