Ion-beam engineering and magnetoelectric properties of ferroelectric/ferromagnetic magnetoelectric heterostructures
The use of ion-­beam sputtering - deposition technique allows to obtain the plane-­parallel thermostable interface ferroelectric / ferromagnetic with a reproducible magnetoelectric behavior. It is shown that the interface between ferroelectric and ferromagnetic phases is of great importance in forming the low­frequency magnetoelectric properties of PZT/Co heterostructures. The magnetoelectric effect of layered Co(2 μm)/PZT (80 μm)/Co(2 μm)/Co(2 μm)/PZT(20 μm)/Co(2 μm)/ Co(2 μm)/PZT(80 μm) /Co(2 μm) heterostructure amounts to 250 mV/(cm∙Oe) at room temperature and at 100 Hz.