Analysis of GaN HEMT parameters before and after gamma-neutron impact
A method for mathematical processing of the results AlGaN/GaN HEMT of volt - capacitance characteristics measurements before and after gamma-neutron irradiation with fluence of 0.4 • 10<sup>14</sup>cm<sup>_2</sup> is proposed. The results of the modeling for AlGaN/GaN HEMT on a SiC substrate are described. The error in calculating GaN HEMT parameters due to the error in calculating the electron distribution profile was observed