ELECTRICAL PROPERTIES OF TWO-DIMENSIONAL IRON LAYERS ON SI(111)7X7 AND SI(111)2X2-FE ORDERED PHASES
Formation and electrical properties of very thin iron layers grown on the ordered Si(111)2x2-Fe phase and on single-crystal silicon Si(111) have been studied. It was established by the Hall measurements that (2х2)-Fe phase is a diffusion barrier which prevents silicide formation during iron deposition at room temperature. It was found that at the iron coverage of 1.35 nm an effective hole's mobility in silicon - iron system is increased up to 820 cm<sup>2</sup>/V·s. This is probably explained by stress in silicon subsurface region.