MODELLING OF THE MULTI-STAGE THERMAL OXIDATION OF SILICON
Based on volume reaction of oxidation, influence of internal stress on diffusion coefficient of oxygen in silicon dioxide and its subsequent relaxation the quantitative model of multi-stage thermal oxidation of silicon is developed. The model allows to describe memory effect - rate of oxidation at the subsequent stage dependence from the temperature of oxidation or anneal at the previous stage. Comparison of calculations according to the model with available literary experimental data on thermal oxidation of silicon in two stages with the presence of intermediate anneal is realized.