ЕLECTROTRANSPORT PROPERTIES WIDE-BANDGAP OXIDES AND MULTILAYER STRUCTURES
The films ZnO, In <sub>2</sub>O <sub>3</sub> and a multilayer structure (In <sub>2</sub>O <sub>3</sub>/ZnO) <sub>83</sub> are prepared. The structure and electrical properties of the films are investigations. X-rays studies have shown that the films of ZnO and In <sub>2</sub>O <sub>3</sub> have fine-grained structure. Low-temperature resistance measurements revealed the presence of weak localization of conduction electrons for films In <sub>2</sub>O <sub>3 </sub>and (In <sub>2</sub>O <sub>3</sub>/ZnO) <sub>83</sub>. It is found that with increasing annealing temperature in In <sub>2</sub>O <sub>3</sub> films the length of inelastic scattering of electrons increases, and in films (In <sub>2</sub>O <sub>3</sub>/ZnO) <sub>83</sub> it is decreases