SATURATION CURRENT OF THE THERMOSENSITIVE FIELDFIELD-EFFECT TRANSISTORS UNDER p-IRRADIATION
The influence of p-irradiation on the saturation current of the thermosensitivity of FEThas been investigated. It was shown that the change current saturation started from theelectron flux Fe > 10<sup>13</sup> cm<sup>-2</sup> with energy of 1 MeV. The influence of these factors leads toaveraging of thermosensitivity.