Charge phenomena disgnostics in the undergate system of n-MOSFETs under high field stress
The undergate system behavior of n-MOSFETs manufactured by SRISA RSA 0,35 μm LDD-technology with 6,3 μm gate dielectric is investigated under high field F-N-stress. To understand processes prior to establishment of the final charge state, a time dependence of F-N current is used. Substantial difference is found between stresses under positive and negative polarity. Physical mechanisms leading to charge state formation are proposed.