A MODEL OF DEGRADATION OF InGaN/GaN LED TAKING INTO ACCOUNT THE HETEROGENEITY OF DEFECT DISTRIBUTION IN THE HETEROSTRUCTURE
A model of degradation of the optical radiation power of an InGaN / GaN LED is presented as a function of the heterogeneity of the distribution of defects in the heterostructure. The time dependence of the LED optical power decay on the value of the model parameter characterizing the ratio of local areas of the active region with a high and low concentration of defects is determined.