TUNNELING OF ELECTRONS FROM THE CRYSTALS OF SILICON WHICH ARE SUPERFICIALLY STRUCTURED WITH USE OF MICROWAVE PLASMA OF ARGON
With use of atomic structure of a surface of crystals of silicon, the self-organization phenomena at sedimentation of submonolayer carbon coverings and high anisotropic microwave plasmochemical etching cathodic matrixes with the nanostructured emission centers are received. The interrelation of their morphological and field emission characteristics is investigated. It is shown that nanostructuring a surface allows more, than to reduce thresholds of initiation of field emission by one third and practically to increase the maximum density of field emission currents which on silicon crystals n-type can reach 5,7 mA/cm<sup>2</sup> by two orders.