Investigation on the Properties of Large [100]-oriented InSb Single Crystals Grown by Czohralski Method
Investigation on the properties of large [100]-oriented InSb single crystals grown by Czoсhralski method The properties of undoped and heavily Te doped large single crystals of InSb grown by Czochralski method in the [100] direction and intended for use in IR photodetectors of new generation were studied. It was found that the non-uniformity in undoped crystals does not exceed 10—16%. The average dislocation density in this ingots was 7 × 10 <sup>1</sup> cm <sup>-</sup> <sup>2</sup> and their distribution along the diameter of (100)-oriented wafers was much more uniform than for the (211)-oriented wafers. We also studied the microstructure of heavily Te doped InSb crystals. It was established that the dislocation density in these crystals was below 1 × 10 <sup>2</sup> cm <sup>-</sup> <sup>2</sup>. Te doping producing the electron concentration higher than 1,5 × 10 <sup>18</sup> cm <sup>-</sup> <sup>3</sup> gave rise to the formation of high density of precipitates. The optical transmission of the samples with electron concentration ~6,9 × 10 <sup>17</sup> cm <sup>-</sup> <sup>3</sup> was found to de higher 40 % for the wavelength range of 3—5 μm.