Researches of the Ohm contact for AuGe/n <sup>+</sup>-GaP
Consideration is given to minimization of specific resistivity of AuGe ohmic contact on the surface of GaAs for use in the Schottky photodiodes technique. The AuGe contact specific resistivity was measured by Transmission Line Method (TLM) depending upon the annealing temperature. The minimal r <sub>c</sub> = 4.01´10 <sup>-3</sup> Ohm/cm was obtained in the course of a rapid annealing. Examining of Schottky photodiodes' current-voltage characteristics confirmed a possibility of use of such contact plating in the photodiodes production technique.