STUDY OF THE INFLUENCE OF BARRIER THICKNESS WHEN SIMULATING THE CHARACTERISTICS OF RTD BASED ON GaN/AlGaN WITH VERTICAL TRANSPORT
In the report, the simulation results of IV-characteristics of resonant tunneling diodes (RTDs) based on GaN/AlGaN with vertical transport, using the proposed numerical combined model, are presented. The model is based on the numerical solution of the Schredinger and Poisson equations in the active region of the device. Cases with AlGaN barriers of various thicknesses are considered.