Depth Profiling of Layered Si−O−Al Thin Films with Secondary Ion Mass Spectrometry and Rutherford Backscattering Spectrometry
The results of depth profiling of four layered Si–O−Al thin films with different content of elements in layers are presented. SIMS and RBS facilities were used to obtain the depth distributions of element densities in the film. The data of the analysis by the method of secondary ion mass spectrometry were used as initial concentration profiles in the processing of Rutherford backscatter spectra using the SIMNRA program. As a result, a model of film structure is constructed that describes the spectra of Rutherford backscattering obtained under various experimental measurement conditions, refines the results of the analysis by the method of secondary ion mass spectrometry and allows obtaining quantitative distributions with respect to the depth of the element concentration and the film density