PREFERENTIAL ETCHING MICRODEFECT IDENTIFICATION IN PERFECT SILICON SINGLE CRYSTALS
The identification of microdefects in dislocation-free silicon single crystals by preferential etching in HF-CrO<sub>3</sub>-H<sub>2</sub>O and HF-K<sub>2</sub>Cr<sub>2</sub>O<sub>7</sub>-H<sub>2</sub>O type etchant has been studied experimentally. We have demonstrated the dependence of the shape and size of microdefect etch traces on etchant type, etching time (removed layer thickness) and microdefect type, and selected etchant compositions providing for the efficient formation of a selective etch surface after etching.