CELL OF THE SILICON INTEGRATED READING MICROCIRCUIT WITH BUILT-IT ANALOG-TO-DIGITAL CONVERTER
This paper describes the project of an accumulative cell of a silicon integral signal reading microcircuit with a built-in analog-to-digital converter for matrix IR photodetectors based on the Hg<sub>1 - x </sub>Cd x Te solid solutions with sensitivity in the spectral range from 8 to 10 microns. The cell is designed according to the silicon technology HCMOS8D of JSC NIIME "Mikron" (Moscow) with a project norm of 0.18 microns. The presented project of the cell has the size of 20 ´ 20 microns, and the number of bits in the built-in analog-to-digital converter is 15. When the average photocurrent is 7 nA and the integration time is 7.5 ms, the estimated value of the temperature difference equivalent to the noise is 4.6 mK.