Elastic peak electron spectroscopy with energy scanning for surface depth analysis
Electron elastic peak spectra are measured for the Au layer on Si substrate at electron beam energies 8, 10, 12, 15 keV. The model of elastic electron scattering from multi-component target is described. Limits of applicability of the classical model with one strong elastic backscattering of electrons are defined. Method for surface depth profiling by mean of the elastic peak electron spectroscopy with energy scanning is described. The depth profile of concentration of Au atoms in Si is determined. Mean error of the developed technique is discussed.