OPTIMIZATION OF RESISTIVE FILM SPUTTERING PROCESS BY MAGNETRON SPUTTERING
Investigation of influence of sputtering regimes and constructive parameters of magnetron sputtering system on homogeneity of resistive film was carried out. It is shown than the main factors defining homogeneity of resistive films are target shape and substrate emplacement relative to magnetron. To obtain homogeneous resistive films, it has been proposed to use targets of extended shape and horizontal emplacement of substrates during sputtering process.