DIFFUSION MODEL OF DEGRADATION OF METAL-SEMICONDUCTOR CONTACTS WITH SCHOTTKY BARRIERS
The diffusion model of degradation of metal-semiconductor contacts with a Schottky barrier due to rearrangement of electrically active impurities via diffusion in internal electric fields is proposed in the paper. The model accounts semiconductor defects induced by electrically active impurities and imperfections of crystal lattice, and diode topology and structure. The model allows to estimate nonfailure operating time of Schottky diodes and can be exploited in CAD systems for IC design.