TERMODYNAMIC ANALYSES OF THE STRAINED GAINNAS LAYER FORMATION BY THE MOLECULAR BEAM EPITAXY
Thermodynamic model for the molecular-beam epitaxy of quaternary solid solutions III-III'V-V' on lattice- mismatched is worked out with an example Ga<sub>x</sub>In<sub>1-x</sub>N<sub>y</sub>As<sub>1-y</sub> Based on the developed model, incorporation of the atomic nitrogen in the strained InGaAsN heterolayers is analyzed versus the growth parameters such as growth temperature and growth rate, the incident arsenic flux, and versus the In concentration in the layer. Obtained results allow determining the appropriate growth conditions of the molecular-beam epitaxy of the strained GaInNAs/GaAs heterolayers used for fabrication long-wave emitters.