Impedance of silicon diodes implanted with gold ions at the energy of 8.6 MeV/u
The effect of the fluence of gold ion irradiation with the energy 8.6 MeV/u on the value of the impedance of silicon diodes with the p+n-junction is studied. It is shown that at this irradiation, the effect of track region overlapping which leads to an increase in the resistivity of the radiation-damaged layer occurs only at the fluence of 10 <sup>9</sup> cm <sup>-2</sup>. It is determined that the formation of the radiation-damaged layer results in an additional dispersion of the complex electrical module and in the growth of the active component of the impedance in the frequency range 2 <sup>.</sup> 10 <sup>5</sup>-2 <sup>.</sup> 10 <sup>6</sup> Hz.