THE RADIATION DEFECTS FORMATION AT ION IMPLANTATION OF THE CdHgTe GRADED-GAP STRUCTURES
In this paper, experimental results on boron implantation of the MBE CdHgTe epilayers with various composition near surface of the material are discussed. Experimental researches of electrophysical parameters of the MBE material after ion implantation have shown that mechanisms of electrical active radiation damage formation are similar both in epitaxial films, and in bulk CdHgTe. Observable differences in implantation processing for a varied zone epitaxial MCT films are caused by mainly various dynamics of electrical active radiation damage accumulation and physical properties dependence from material composition. The experimental results show that additional factors related to composition gradient near the film surface have no sufficient influence on processes of primary radiation defects migration.