Arrangement and formation of signal a multipixel nuclear radiation detector on the basis InP
In a paper the schemas of realization of several alternative of an active elements of multipixel detectors on the basis InP are considered. A basis of the device is monolithic thick layer the multi element structure on the basis high-ohmic material. The special concern is introduced heteroepitacsial structure, as is perspective alternative grounded on InP-technology. The arguments of the device depend on structural quality of a heterojuction.