MEMS TUNNELING DISPLACEMENT TRANSDUCERS SIMULATION METHOD
In this work a parametric representation of the tunneling displacement transducer is given.The main parameters are work function, electrode distance, bias voltage. The numerical method of the Schrödinger stationary one-dimensional equation solving for quantum transport simulation at nanoscale is developed. The expressions for potential barriers transparency calculation are obtained. The method discussed in this work is capable for obtaining numeric solutions whether on stepped or continuously differentiable potential reliefs.Itwas concluded thatin some casesneglecting qualitative changes occurring to the potential relief at the electrodesurfacesdramatically affects transparency. The main features of the proposed method of modeling MEMS tunneling displacement transducers are: using a parametric model of the tunneling transducer; taking into account the interaction of the tunneling electrons with the electrodes of the converter; numerical calculation of transmission coefficients of the potential relief.