ALLOY SILICON WHISKERS OF THE GERMANY IN THE COURSE OF GROWTH
It is established influences of technology factors of synthesis on concentration of Ge in Si whiskers in the course growth. It is defined that sites of the maximum sedimentation of silicon and germany are in different zones, thus the peak of sedimentation of Ge with increase in temperature is even more displaced in the beginning of a zone of the reactor. It is estab-lished that for the same conditions of the growth, the threadlike crystals of silicon alloyed by a germaniye are faceted, while not alloyed keep a cylindrical profile. In particular germany in a crystal leads the considerable contents to facet the planes (110) and to receiving a six-sided profile. The smaller contents germany finds a twelve -sided profile of the planes of big in-dexes