SUPERFICIAL AND SPECIFIC RESISTANCE OF THE TWO-LAYER ALUMINIUM METALLIZATION OF CONTACT PLATFORMS CRYSTALS OF POWER SEMI-CONDUCTOR DEVICES
Results of researches of superficial and specific resistance of two-layer aluminum metallization of contact platforms of power semi-conductor devices are resulted. It is established that size of specific and superficial resistance of two-layer aluminum metallization (with intermediate layer Al-Ni and with intermediate layer Al-Ti) the identical thickness put on silicon above, than at the similar samples put on SiO<sub>2</sub>