INVESTIGATIONS OF Si/Si-O<sub>y</sub>-Si<sub>4 y</sub> NANOSYSTEM BY THE COMPUTER SIMULATION METHOD
The atomic system is simulated by the Monte-Carlo method of computer modeling. Analyzing results of computer modeling, we have found out some features of structure of thin oxide of silicon, in particular function of radial distribution demonstrates disorder in an arrangement of atoms Si and O; near the surface the decrease of values of a corner Si-O-Si of connection is observed; the critical concentration of oxygen, at which silicon cluster is formed makes 0.9 from a stoichiometric value.