pH-SENSITIVE ELEMENT BASED ON SILICON NANOSTRUCTURE
Sensitive elements for pH-meters created on silicon nanostructures are researched. Experimental methods for detecting electrophysical parameters of ion-sensitive field-effect transistors (ISFET) are considered. It is shown, that sensitive element, which is made of "one-dimensional" silicon nanostructure have bigger pH-sensitivity as compared with "two-dimensional" structure.