Short wave infrared camera with a focal plane array based on the InGaAs/InP heterostructures
Consideration is given to the results of development and testing of a camera for short wave infrared spectrum range (0.9-1.7 μm). This camera is founded on the 320´256 focal plane array, the first in Russia, which has a low-temperature dependence of sensitivity and pixel pitch of 30 μm. The FPA is based on the InGaAs/InP heterostructure. The main components and parameters of the camera are considered. The advantages and applications of the camera are shown both in the composition of multispectral optoelectronic systems and as an independent device.