About possibility of decrease of the threshold energy for Auger generation of electron-hole pairs in the direct-gap semiconductors at pair collisions at the cost of deviation from direct-band of the semiconductor
Consideration if given to a particular dependence of the threshold energy for the band-to-band impact generation of electron-hole pairs in semiconductors at two-particle collisions on an indirect-gap degree of semiconductor. It is shown that this dependence is asymmetric and non-monotonic in relation to the direct-gap arrangement of bands in a semiconductor; moreover, minimum threshold energy is lower, than in direct-gap semiconductor.