THE INFLUENCE OF THE MAGNETIC FIELD ON GALVANOMAGNETIC COEFFICIENTS OF BISMUTH FILMS DOPED WITH TELLURIUM
In this paper, we was studied the effect of the magnetic field magnitude on the galvanomagnetic coefficients of thin bismuth films doped with tellurium in the concentration range 0.005-0.150 at.% Te and thicknesses range 0.10-0.65 μm. The magnitude of the magnetic field was varied from 0 to 0.65 T. The temperature interval in which the studies were conducted was 77 - 300 K. All films were obtained by the method of discrete thermal spraying in a high vacuum of 1.5‧10<sup>-5</sup> mm Hg. Thickness measurements of the studied films was carried out by interference methods and monitored by atomic force microscopy methods. The investigations of galvanomagnetic phenomena in bismuth films doped with tellurium spend on a special automated measuring facility for studying the properties of thin-film samples using classical methods: the measurements were carried out at a constant temperature, a constant magnetic field. It has been established that an increase in the concentration of tellurium impurity from 0.005 at. % to 0.150 at.% in bismuth films in the temperature range under study leads to an increase in the area of a weak magnetic field up to 0.65 T. A significant manifestation of the classical size effect was observed, the effect of which weakens as the degree of doping of films increases.