EFFECT OF PHOSPHORUS AND HYDROGEN DOPING ON THE PHOTOLUMINESCENCE OF SILICON NANOCRYSTALS IN A DIELECTRIC MATRIX
We present the results of studying the effect of phosphorus and hydrogen ion doping, as well as annealing in a hydrogen atmosphere, on photoluminescence (PL) properties of monolayer nanostructures SiO2:nc-Si formed in the process of high-temperature annealing of thin <i>a</i>-SiO films, which were obtained by the molecular-beam deposition on silicon. The effect of high-temperature posthydrogenation of multilayer system (SiO2:nc-Si)/ Al2O3 prepared by annealing of <i>a</i>-SiO/ Al2O3 nanoperiodic structure is also studied. The a-SiO/ Al2O3 structure was obtained by the alternation of the thermal (for SiO) and electron beam (for Al2O3) vacuum evaporation. It is shown that phosphorus ion doping of the SiO2:nc-Si structure leads to PL enhancement of 750-800 nm band inherent to silicon nanocrystals, and quenching of this band occurs under ion implantation of hydrogen. Posthydrogenation of both kinds of structures by annealing in hydrogen leads to the passivation of defects on nanocrystal/matrix interfaces and, as a result, enhancement of the nc-Si related PL.