DEPENDENCE OF CHARACTERICTICS OF ALGAAS BASED SOLAR CELL ON THICKNESS AND DOPING LEVEL BASE
Simulation of dependencies of characteristics of AlGaAs based solar cell, using AFORS-HET program, on thickness d and doping level N<sub>A</sub> base has been performed. It is found that increasing the thickness of the base from 1 to 10 microns leads to a dramatic increase in efficiency with 9,42 % at 1 microns to 33,03 % at 10 microns. Open circuit voltage U<sub>oc</sub>, by increasing the thickness of the base from 1 to 50 microns increased by 95 mV. Increasing the doping level of the base leads to an increase short circuit current from 13,91 to 23,34 mA/cm<sup>2</sup>. The open circuit voltage will be increased from 1.487 to 1.594 V.