Nonvolatile electric memory surface-type elements baseD on organic-on-organic CuPc-H<sub>2</sub>Pc heterojunction
Nonvolatile electric memory surface-type elements based on organic semiconductors CuPc and H<sub>2</sub>Pc were fabricated by vacuum deposition of the CuPc and H<sub>2</sub>Pc films on preliminary deposited metallic Ag and Cu films on glass substrate. In the I-V characteristics the memory effect was observed. The switching mechanism is attributed to electric-field-induced charge transfer from an organic electron donor to an acceptor. In the result the device switches from a low- to a high-conductivity state and back to low conductivity state if opposite polarity voltage was applied. This element con be used in electronics and in formation systenis.